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STTA112U

STMicroelectronics

STTA112U by STMicroelectronics

STTA112U by STMicroelectronics is a single rectifier diode with 1200V peak reverse voltage and 1A output current. It has a max forward voltage of 1.7V and operates at temperatures up to 125 °C. Ideal for applications requiring fast reverse recovery time in a small outline package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ComSIT Distribution GmbH

Germany . 7,500 parts In-Stock

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7,500

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Vyrian

USA . 6,676 parts In-Stock

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6,676

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Chip Stock

USA . 4,000 parts In-Stock

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4,000

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EPE Components Inc.

USA . 2,213 parts In-Stock

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2,213

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Bristol Electronics

USA . 2,213 parts In-Stock

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2,213

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LIBRA Elektronik GmbH

Germany . 2,083 parts In-Stock

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2,083

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ECAB

Sweden . 475 parts In-Stock

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475

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Component Sense

UK . 241 parts In-Stock

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241

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Anansix

USA . 137 parts In-Stock

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Digiode

USA . 53 parts In-Stock

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Contempo Components LLC

USA . 14 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 6 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,262 parts In-Stock

1+ parts

$0.112

100+ parts

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$0.101

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1,262

$0.112

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$0.101

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MKK Technologies

India . 39 parts In-Stock

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$0.211

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39

$0.211

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DigiPath Technology Company

USA . 39 parts In-Stock

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$0.211

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39

$0.211

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AZTECH Wire

Italy . 1,219 parts In-Stock

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$16.300

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$16.300

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Kepictronics

USA . 90,000 parts In-Stock

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Perfect Parts

USA . 2,139 parts In-Stock

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Parana Technologies

USA . 1,959 parts In-Stock

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$0.134

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1,959

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$0.134

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Cyclops Electronics Ltd (Excess)

UK . 955 parts In-Stock

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955

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Corphita

USA . 744 parts In-Stock

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744

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A-Z Elektronik GmbH

Germany . 398 parts In-Stock

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398

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Overview

Discover the STTA112U by STMicroelectronics, a high-quality rectifier diode designed to meet your power needs with precision and reliability. Manufactured by industry leader STMicroelectronics, this diode offers exceptional performance and versatility in a compact package. Ideal for a wide range of applications, from power supplies to battery chargers, the STTA112U delivers efficient power conversion and long-term durability. Trust STMicroelectronics to provide innovative solutions that enhance your product performance and deliver value to your customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the diode, making it suitable for various environmental conditions.

Config: SINGLE

The single configuration simplifies installation and circuit design, making it easier to integrate into electronic systems.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting onto circuit boards, saving space and reducing assembly time.

Maximum Reverse Recovery Time: 0.115 us

The fast reverse recovery time ensures efficient and reliable operation of the diode in high-speed applications.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy placement and alignment of the diode within electronic circuits.

No. of Terminals: 2

Having two terminals simplifies the wiring connection, ensuring straightforward integration into circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact circuit layouts, especially in devices with limited room for components.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising performance, making it suitable for industrial applications.

Terminal Finish: MATTE TIN

MATTE TIN terminal finish provides good conductivity and corrosion resistance, ensuring reliable electrical connections and longevity of the diode.

Terminal Position: DUAL

The dual terminal position allows for secure and stable mounting, enhancing the overall reliability of the diode in various operating conditions.

Maximum Power Dissipation: 1.5 W

The high maximum power dissipation rating indicates the diode's capability to handle power efficiently, reducing the risk of overheating and ensuring long-term reliability.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is ideal for converting alternating current (AC) to direct current (DC) with minimal voltage drop, making it suitable for a wide range of power electronics applications.

Maximum Forward Voltage (VF): 1.7 V

The low maximum forward voltage drop of 1.7 V ensures energy efficiency and minimal power loss, making it a cost-effective choice for electronic circuits.

Maximum Output Current: 1 A

The high maximum output current rating of 1 A allows the diode to handle substantial current flow, making it suitable for power supply and rectification applications.

Terminal Form: C BEND

The C BEND terminal form provides a secure and stable connection during installation, minimizing the risk of disconnection and ensuring long-lasting performance.

Maximum Repetitive Peak Reverse Voltage: 1200 V

The high maximum repetitive peak reverse voltage rating of 1200 V indicates the diode's ability to withstand high reverse voltage conditions, ensuring reliable operation in demanding environments.

Maximum Non-Repetitive Peak Forward Current: 22 A

The high maximum non-repetitive peak forward current rating of 22 A allows the diode to handle short-term surge currents without damage, making it suitable for transient protection applications.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures high efficiency, low forward voltage drop, and excellent thermal stability, making it a reliable choice for various electronic applications.

Technical Specifications

Diodes & Rectifiers STTA112U attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

22 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

1.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Recovery Time:

.115 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTA112U Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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