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STS9NF3LL

STMicroelectronics

STS9NF3LL by STMicroelectronics

STS9NF3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 9 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Its compact surface mount design ensures versatility in various electronic circuits.

Median Price

$0.656

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,752 parts In-Stock

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$0.656

1,752

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$0.656

Distributors (In-Stock)

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Digiode

USA . 975 parts In-Stock

1+ parts

$2.232

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975

$2.232

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Vyrian

USA . 4,252 parts In-Stock

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$2.350

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4,252

$2.350

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LIBRA Elektronik GmbH

Germany . 2,346 parts In-Stock

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2,346

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ACDS - Activité Composants Distribution Service

France . 1,682 parts In-Stock

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1,682

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Bristol Electronics

USA . 1,682 parts In-Stock

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$0.649

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$0.450

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1,682

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$0.649

$0.450

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Dan-Mar Components

USA . 1,682 parts In-Stock

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1,682

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Anansix

USA . 1,362 parts In-Stock

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1,362

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Fibra_Brandt Electronic GMBH

Germany . 15 parts In-Stock

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IDEA Electronic Components Group

UK . 878 parts In-Stock

1+ parts

$1.175

100+ parts

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$1.057

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878

$1.175

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$1.057

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Corphita

USA . 157 parts In-Stock

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$2.115

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157

$2.115

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MKK Technologies

India . 1,706 parts In-Stock

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$2.209

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1,706

$2.209

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DigiPath Technology Company

USA . 1,706 parts In-Stock

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$2.209

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$2.209

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Microchip USA

USA . 8,307 parts In-Stock

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$4.607

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$4.607

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Component Stockers USA

USA . 753 parts In-Stock

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$99.990

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753

$99.990

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Perfect Parts

USA . 12,797 parts In-Stock

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Alle Elektronik GmbH

Germany . 9,582 parts In-Stock

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Kepictronics

USA . 5,500 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,682 parts In-Stock

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4,682

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Assy Fe

Spain . 2,500 parts In-Stock

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Parana Technologies

USA . 2,253 parts In-Stock

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$1.405

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$1.405

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Overview

Elevate your electronic projects with the STS9NF3LL from STMicroelectronics, a trusted leader in innovation. This high-performance N-channel power FET offers exceptional efficiency and reliability for switching applications, ensuring your designs operate seamlessly. With its compact surface mount package and built-in diode, the STS9NF3LL is perfect for various uses, from consumer electronics to industrial systems, delivering robust performance and outstanding value to customers looking to enhance their products.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides a durable and lightweight package that enhances reliability and thermal performance.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are typically faster and more efficient in switching applications, making this product ideal for high-performance systems.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode adds functionality, allowing for better protection and ease of design in circuits needing protection against reverse polarity.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures efficiency and fast response times, crucial for modern electronic circuits.

Surface Mount: YES

Being surface mount compatible allows for compact designs and easy integration into various PCB layouts, enhancing overall versatility.

Minimum DS Breakdown Voltage: 30 V

With a breakdown voltage of 30V, it provides adequate margin for safe operation in automotive and industrial applications.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on PCBs and aligns well with common mounting practices in electronic devices.

Terminal Form: GULL WING

Gull wing terminals facilitate automatic pick-and-place assembly, which can reduce manufacturing costs and improve reliability.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows the FET to be turned off, contributing to lower power loss in standby modes.

Maximum Pulsed Drain Current (IDM): 36 A

The capability of handling high pulsed currents makes this FET suitable for applications with dynamic load conditions.

Maximum Drain Current (Abs) (ID): 9 A

With an absolute maximum drain current of 9A, it provides significant current-carrying capabilities for various load applications.

No. of Terminals: 8

An 8-terminal configuration offers adequate connectivity options for efficient circuit integration while remaining compact.

Maximum Power Dissipation (Abs): 2.5 W

The ability to dissipate up to 2.5W suggests effective thermal management, enhancing stability and lifespan in demanding conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for high-density circuit designs, making it ideal for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology offers high input impedance and low gate drive power, which are advantageous in various analog and digital applications.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C allows for reliable performance in high-temperature environments, suitable for automotive and industrial applications.

Transistor Element Material: SILICON

Silicon is the standard material for transistors, ensuring reliability, efficiency, and cost-effectiveness in electronic components.

Terminal Finish: NICKEL PALLADIUM GOLD

This terminal finish provides excellent corrosion resistance and superior electrical performance, ensuring long-term reliability.

Maximum Drain Current (ID): 9 A

This dual specification reinforces the FET's capability of handling robust current loads, making it versatile across applications.

Maximum Drain-Source On Resistance: 0.022 ohm

A low on-resistance translates into higher efficiency and lower heat generation during operation, enhancing overall performance.

Terminal Position: DUAL

Dual terminal positioning provides flexibility in design and layout, facilitating easier connections and integration into circuit boards.

Technical Specifications

Power Field Effect Transistors (FET) STS9NF3LL attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

9 A

Maximum Drain Current (ID):

9 A

Maximum Drain-Source On Resistance:

.022 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

36 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STS9NF3LL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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