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STS4C3F30L

STMicroelectronics

STS4C3F30L by STMicroelectronics

STS4C3F30L by STMicroelectronics is a versatile N/P-channel FET designed for switching applications. It features a max drain current of 5 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,184 parts In-Stock

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Digiode

USA . 3,894 parts In-Stock

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3,894

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Anansix

USA . 575 parts In-Stock

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575

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 714 parts In-Stock

1+ parts

$0.709

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$0.638

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714

$0.709

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$0.638

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MKK Technologies

India . 659 parts In-Stock

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$1.334

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659

$1.334

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DigiPath Technology Company

USA . 659 parts In-Stock

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$1.334

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659

$1.334

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Kepictronics

USA . 5,099 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Parana Technologies

USA . 581 parts In-Stock

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$0.848

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581

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$0.848

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Corphita

USA . 539 parts In-Stock

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Overview

Elevate your designs with the STS4C3F30L from STMicroelectronics, a powerhouse in Power FET technology. Renowned for their excellence, STMicroelectronics delivers top-tier components that ensure reliability and superior performance across various applications, from industrial automation to consumer electronics. This versatile N-channel and P-channel transistor configuration offers enhanced efficiency and ease of integration, making it an exceptional choice for any project. Experience the perfect blend of quality, innovation, and value with STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy package material ensures durability and protection against environmental factors, making it reliable for various applications.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel configurations allows for versatile circuit design, enabling easy integration into different systems.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration simplifies circuit design and provides additional protection against reverse polarity, enhancing circuit robustness.

Transistor Application: SWITCHING

Optimized for switching applications, making it ideal for power management, signal processing, and other switching-related tasks.

Surface Mount: YES

Surface mount capability facilitates compact designs and allows for automated assembly, making it suitable for high-volume manufacturing.

Minimum DS Breakdown Voltage: 30 V

A minimum breakdown voltage of 30 V ensures reliable operation in various applications, providing safety against potential voltage spikes.

Package Shape: RECTANGULAR

The rectangular package shape supports efficient PCB layout and contributes to enhanced thermal performance.

Terminal Form: GULL WING

Gull wing terminals provide excellent solderability and mechanical strength, leading to reliable connections in the final assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for lower on-resistance and greater efficiency when the transistor is turned on, improving overall performance.

No. of Elements: 2

Having two elements in the configuration allows flexibility in circuit design and enables the creation of more complex functions within a single package.

Maximum Pulsed Drain Current (IDM): 20 A

A maximum pulsed drain current of 20 A accommodates demanding applications, ensuring the product can handle high power loads effectively.

Maximum Drain Current (Abs) (ID): 5 A

With a maximum drain current capability of 5 A, this transistor can efficiently manage power without overheating, making it suitable for many applications.

No. of Terminals: 8

The 8-terminal configuration allows for versatile connectivity and integration options in modern electronics.

Maximum Power Dissipation (Abs): 2 W

Rated for a maximum power dissipation of 2 W, the product can operate under significant load conditions while maintaining thermal stability.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for space-constrained applications, allowing for compact designs without sacrificing performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing MOS technology offers high-speed operation and low power consumption, making it efficient for modern electronic applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C allows this FET to function reliably in demanding thermal environments.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures good conductivity and reliable performance across a wide range of conditions.

Maximum Drain Current (ID): 5 A

Reiterating the maximum drain current of 5 A confirms that this product is optimized for handling significant loads efficiently.

Maximum Drain-Source On Resistance: 0.065 ohm

A low on-resistance of 0.065 ohm reduces power loss during operation, enhancing the overall efficiency of the device.

Terminal Position: DUAL

Dual terminal positioning allows for easier layout in circuit designs, enhancing the versatility and usability in different applications.

Technical Specifications

Power Field Effect Transistors (FET) STS4C3F30L attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

LOW THRESHOLD

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

5 A

Maximum Drain Current (ID):

5 A

Maximum Drain-Source On Resistance:

.065 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Maximum Pulsed Drain Current (IDM):

20 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STS4C3F30L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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