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STL45N10F7AG

STMicroelectronics

STL45N10F7AG by STMicroelectronics

STL45N10F7AG by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage and 72A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 72W and operates in ENHANCEMENT MODE. The transistor features a 0.024 ohm Drain-Source On Resistance and can withstand temperatures from -55 to 175 °C.

Median Price

$1.960

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 12,000 parts In-Stock

1+ parts

$1.960

100+ parts

$0.843

1k+ parts

$0.625

10k+ parts

$0.584

12,000

$1.960

$0.843

$0.625

$0.584

DigiKey

USA . 4,804 parts In-Stock

1+ parts

$1.960

100+ parts

$0.843

1k+ parts

$0.625

10k+ parts

$0.510

4,804

$1.960

$0.843

$0.625

$0.510

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.529

3,000

-

-

-

$0.529

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 18 parts In-Stock

1+ parts

$0.886

100+ parts

-

1k+ parts

-

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18

$0.886

-

-

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Digiode

USA . 1,951 parts In-Stock

1+ parts

$1.501

100+ parts

-

1k+ parts

-

10k+ parts

-

1,951

$1.501

-

-

-

ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,000

-

-

-

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ComSIT USA

USA . 3,000 parts In-Stock

1+ parts

-

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3,000

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Vyrian

USA . 2,587 parts In-Stock

1+ parts

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2,587

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Anansix

USA . 1,265 parts In-Stock

1+ parts

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1,265

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.886

100+ parts

-

1k+ parts

$0.842

10k+ parts

$0.824

2,000

$0.886

-

$0.842

$0.824

Argo Parts USA

USA . 450 parts In-Stock

1+ parts

$0.886

100+ parts

-

1k+ parts

-

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450

$0.886

-

-

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Continental Prestige Electronics

USA . 378 parts In-Stock

1+ parts

$0.886

100+ parts

-

1k+ parts

-

10k+ parts

$0.869

378

$0.886

-

-

$0.869

Ampacity Inc.

Singapore . 3,022 parts In-Stock

1+ parts

$1.340

100+ parts

-

1k+ parts

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10k+ parts

-

3,022

$1.340

-

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Corphita

USA . 2,751 parts In-Stock

1+ parts

$1.422

100+ parts

-

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2,751

$1.422

-

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Aztec Data Supply Inc.

USA . 1,166 parts In-Stock

1+ parts

$1.520

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1,166

$1.520

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IDEA Electronic Components Group

UK . 423 parts In-Stock

1+ parts

$1.559

100+ parts

-

1k+ parts

$1.403

10k+ parts

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423

$1.559

-

$1.403

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MKK Technologies

India . 1,504 parts In-Stock

1+ parts

$2.932

100+ parts

-

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1,504

$2.932

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DigiPath Technology Company

USA . 1,504 parts In-Stock

1+ parts

$2.932

100+ parts

-

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1,504

$2.932

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Microchip USA

USA . 7,339 parts In-Stock

1+ parts

$4.552

100+ parts

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7,339

$4.552

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Perfect Parts

USA . 13,440 parts In-Stock

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13,440

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Alle Elektronik GmbH

Germany . 3,806 parts In-Stock

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3,806

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A-Z Elektronik GmbH

Germany . 2,690 parts In-Stock

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2,690

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Lixinc

USA . 1,951 parts In-Stock

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1,951

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Parana Technologies

USA . 1,731 parts In-Stock

1+ parts

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100+ parts

$1.864

1k+ parts

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1,731

-

$1.864

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Overview

Unleash the power of innovation with the STL45N10F7AG by STMicroelectronics. Crafted with precision and quality, this Power Field Effect Transistor (FET) offers unparalleled performance in switching applications. With a single configuration and built-in diode, this N-channel transistor is designed to enhance efficiency and reliability. Whether you're looking to optimize energy consumption or streamline your operations, this small outline package delivers exceptional value and benefits. Trust STMicroelectronics to provide cutting-edge solutions for all your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the FET, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching and control of current flow in the circuit.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a diode within the FET package for added functionality.

Transistor Application: SWITCHING

Designed for high-speed switching applications, making it ideal for power control and management.

Surface Mount: YES

Facilitates easy installation on circuit boards, saving space and reducing assembly time.

Minimum DS Breakdown Voltage: 100 V

Withstands high voltage conditions, ensuring stable operation in various applications.

Package Shape: RECTANGULAR

Enables easy handling and placement on circuit boards, optimizing space utilization.

Terminal Form: FLAT

Provides a secure connection with other components and facilitates soldering during assembly.

Operating Mode: ENHANCEMENT MODE

Offers improved efficiency and performance in switching operations, enhancing overall circuit functionality.

Maximum Pulsed Drain Current (IDM): 72 A

Capable of handling high peak currents, suitable for demanding applications requiring efficient power management.

Avalanche Energy Rating (EAS): 150 mJ

Ensures reliable operation under transient conditions, protecting the FET from damage during voltage spikes.

No. of Terminals: 5

Provides multiple connection points for versatile integration into different circuit configurations.

Maximum Power Dissipation (Abs): 72 W

Ability to dissipate heat efficiently, preventing thermal overload and ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

Compact design saves space on the PCB and allows for denser circuit layouts in constrained environments.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Delivers high performance and efficiency for power switching applications, enhancing overall circuit operation.

Maximum Operating Temperature: 175 °C

Suitable for operation in high-temperature environments, ensuring reliable performance under challenging conditions.

Transistor Element Material: SILICON

Provides excellent electrical properties and reliability, ensuring consistent performance over a wide range of operating conditions.

Minimum Operating Temperature: -55 °C

Capable of functioning in extreme low-temperature conditions, making it suitable for a variety of applications.

Terminal Finish: MATTE TIN

Enhances solderability and electrical conductivity, ensuring reliable connections for optimal circuit performance.

Maximum Drain Current (ID): 18 A

Handles high continuous currents, suitable for power control applications that require steady operation.

Maximum Drain-Source On Resistance: 0.024 ohm

Low on-resistance minimizes power losses and voltage drops, improving efficiency and performance in power management.

Terminal Position: DUAL

Offers flexibility in circuit connection options, allowing for different configurations based on design requirements.

Case Connection: DRAIN

Provides a convenient connection point for drain terminal, simplifying circuit layout and ensuring proper operation.

Peak Reflow Temperature °C: 260

Can withstand high-temperature reflow soldering processes, ensuring reliable and durable solder joints during assembly.

Reference Standard: AEC-Q101

Compliance with automotive industry standards ensures high-quality and reliable performance in automotive applications.

Technical Specifications

Power Field Effect Transistors (FET) STL45N10F7AG attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Avalanche Energy Rating (EAS):

150 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

18 A

Maximum Drain-Source On Resistance:

.024 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

72 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STL45N10F7AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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