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STG4260BJR

STMicroelectronics

STG4260BJR by STMicroelectronics

STG4260BJR by STMicroelectronics is a CMOS SPDT switch with a max on-state resistance of 2.5Ω and operates b/w 1.65V to 4.8V. It features a very thin profile (1.4mm x 1.9mm) and offers fast switching times of 160ns on and 62ns off, ideal for industrial applications. Its robust design ensures reliable performance in harsh environments, with an operating temp range from -40 °C to 85 °C.

Median Price

$0.275

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 5,000 parts In-Stock

1+ parts

$0.293

100+ parts

$0.275

1k+ parts

$0.262

10k+ parts

$0.258

5,000

$0.293

$0.275

$0.262

$0.258

Verical

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

$0.275

1k+ parts

$0.262

10k+ parts

$0.258

5,000

-

$0.275

$0.262

$0.258

Chip1Stop

Japan . 5,000 parts In-Stock

1+ parts

-

100+ parts

$0.156

1k+ parts

-

10k+ parts

-

5,000

-

$0.156

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,018 parts In-Stock

1+ parts

$0.149

100+ parts

-

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2,018

$0.149

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Vyrian

USA . 5,771 parts In-Stock

1+ parts

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5,771

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R&J Components

USA . 5,000 parts In-Stock

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5,000

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Anansix

USA . 2,682 parts In-Stock

1+ parts

-

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2,682

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,310 parts In-Stock

1+ parts

$0.141

100+ parts

-

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-

10k+ parts

-

1,310

$0.141

-

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Component Stockers USA

USA . 14,774 parts In-Stock

1+ parts

$0.150

100+ parts

$0.150

1k+ parts

$0.140

10k+ parts

-

14,774

$0.150

$0.150

$0.140

-

Microchip USA

USA . 211 parts In-Stock

1+ parts

$1.840

100+ parts

-

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211

$1.840

-

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AZTECH Wire

Italy . 1,103 parts In-Stock

1+ parts

$8.900

100+ parts

-

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1,103

$8.900

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IDEA Electronic Components Group

UK . 307 parts In-Stock

1+ parts

$9.631

100+ parts

-

1k+ parts

$8.668

10k+ parts

-

307

$9.631

-

$8.668

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MKK Technologies

India . 812 parts In-Stock

1+ parts

$18.110

100+ parts

-

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812

$18.110

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DigiPath Technology Company

USA . 812 parts In-Stock

1+ parts

$18.110

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812

$18.110

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Perfect Parts

USA . 468,048 parts In-Stock

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468,048

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Vigor

Singapore . 6,509 parts In-Stock

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6,509

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Assy Fe

Spain . 5,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

1+ parts

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3,000

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Parana Technologies

USA . 1,484 parts In-Stock

1+ parts

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100+ parts

$11.515

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1,484

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$11.515

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Overview

Unlock the potential of your designs with the STG4260BJR from STMicroelectronics, a trusted leader in semiconductor innovation. This high-performance multiplexer offers exceptional reliability and efficiency, ensuring seamless integration into diverse applications like consumer electronics and industrial automation. With a compact, thin-profile package and superb power management capabilities, elevate your projects while enjoying the benefits of reduced energy consumption and enhanced functionality. Choose quality that drives performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures a durable and lightweight package, making it suitable for various applications.

Surface Mount: YES

Being surface mount allows for easier integration into modern PCB designs and saves space.

No. of Functions: 2

Having multiple functions enables versatile applications in a single IC, improving design efficiency.

Package Shape: RECTANGULAR

The rectangular shape facilitates convenient placement and alignment on PCBs.

Nominal Supply Voltage (Vsup): 1.8 V

A low nominal supply voltage helps reduce overall power consumption, ideal for battery-operated devices.

Power Supplies (V): 1.8/4

Offering multiple supply voltage options increases flexibility in design and integration.

No. of Terminals: 12

With 12 terminals, this IC can accommodate complex circuits while preserving a compact footprint.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The very thin profile and fine pitch design optimize space usage on PCBs and enhance thermal performance.

Maximum Operating Temperature: 85 °C

A high maximum operating temperature rating ensures reliability and performance in demanding environments.

Minimum Operating Temperature: -40 °C

This specification allows the device to function effectively in extreme cold conditions, expanding its application fields.

Terminal Position: BOTTOM

Bottom terminals facilitate better heat dissipation and ensure ease of mounting on PCBs.

Output (V): SEPARATE OUTPUT

Separate outputs provide more control and versatility in signal management for the circuit.

Maximum Seated Height: 0.625 mm

A low seated height ensures minimized profile increasing compatibility with slim portable devices.

Width: 1.4 mm

The compact width means this device can fit into tight spaces, making it great for miniaturized applications.

Other IC type: SPDT

SPDT configuration allows flexible switching between two signal paths, enhancing routing options.

Minimum Supply Voltage (Vsup): 1.65 V

A low minimum supply voltage enables effective operation in low-power applications.

Maximum On-state Resistance (Ron): 2.5 ohm

Low on-state resistance minimizes signal loss, ensuring efficient power transfer in circuits.

Maximum Switch-on Time: 160 ns

Fast switch-on time enhances the responsiveness of the device for high-speed applications.

Length: 1.9 mm

Compact length provides flexibility in layout design and space management.

Maximum Switch-off Time: 62 ns

Rapid switch-off time enables precise control in fast switching applications.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, ensuring robustness and reliability in harsh conditions.

Technology: CMOS

CMOS technology extends battery life and minimizes power consumption, ideal for portable electronics.

Terminal Form: BALL

Ball terminals facilitate easier soldering and better electrical connectivity on PCBs.

Terminal Pitch: 0.5 mm

A smaller terminal pitch allows for denser component placement, which is crucial in compact designs.

Maximum Supply Voltage (Vsup): 4.8 V

Supporting up to 4.8V provides versatility in usage across a range of applications.

Nominal Off-state Isolation: 50 dB

High off-state isolation reduces interference between multiple signals, ensuring signal integrity.

Switching (V): BREAK-BEFORE-MAKE

This switching method eliminates short-circuit risks while transitioning, improving system reliability.

Nominal On-state Resistance Match: 40 ohm

Optimal on-state resistance match enhances circuit performance and ensures consistency across devices.

Technical Specifications

Multiplexers & Switches STG4260BJR attributes and parameters. Explore more Multiplexers & Switches devices from STMicroelectronics

Specs

Other IC type:

JESD-30 Code:

R-PBGA-B12

Length:

1.9 mm

No. of Channels:

1

No. of Functions:

2

No. of Terminals:

12

Nominal Off-state Isolation:

50 dB

Nominal On-state Resistance Match:

40 ohm

Maximum On-state Resistance (Ron):

2.5 ohm

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA12,3X4,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

1.8/4

Qualification:

Not Qualified

Maximum Seated Height:

.625 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Voltage (Vsup):

4.8 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage (Vsup):

1.8 V

Surface Mount:

YES

Maximum Switch-off Time:

62 ns

Maximum Switch-on Time:

160 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

1.4 mm

Trade Compliance

STG4260BJR Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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