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ST6G3238NETBR

STMicroelectronics

ST6G3238NETBR by STMicroelectronics

ST6G3238NETBR from STMicroelectronics is a CMOS interface IC designed for industrial applications. It operates b/w 1.4V and 3.6V, with a max temp of 85 °C and features a compact 25-terminal grid array package. Ideal for surface mount technology, it ensures reliable performance in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,924 parts In-Stock

1+ parts

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4,924

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Digiode

USA . 2,771 parts In-Stock

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2,771

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Anansix

USA . 600 parts In-Stock

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600

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,806 parts In-Stock

1+ parts

$12.274

100+ parts

-

1k+ parts

$11.046

10k+ parts

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1,806

$12.274

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$11.046

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MKK Technologies

India . 948 parts In-Stock

1+ parts

$23.080

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948

$23.080

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DigiPath Technology Company

USA . 948 parts In-Stock

1+ parts

$23.080

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948

$23.080

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Corphita

USA . 3,649 parts In-Stock

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3,649

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Parana Technologies

USA . 338 parts In-Stock

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$14.675

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338

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$14.675

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Overview

Unlock unparalleled performance with the ST6G3238NETBR from STMicroelectronics—your go-to solution for seamless interface connections in industrial applications. Crafted with precision and quality assurance, this robust IC excels in harsh environments, operating efficiently across a wide temperature range. Enjoy the benefits of cutting-edge technology that ensures reliability and longevity, bringing exceptional value to your projects while enhancing productivity and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and resistance to environmental factors, making it suitable for various applications.

Surface Mount: YES

The surface mount capability allows for a compact design, which is essential for modern electronics with limited space.

Maximum Supply Voltage: 3.6 V

Having a maximum supply voltage of 3.6 V ensures compatibility with a wide range of power supply systems.

Package Shape: SQUARE

The square shape facilitates better thermal management and consistent connections on PCB layouts.

No. of Terminals: 25

With 25 terminals, this product allows for multiple connections, enabling complex interfacing and functionality.

Package Style (Meter): GRID ARRAY

A grid array package style supports high-density interconnections and efficient use of PCB space.

Minimum Supply Voltage: 1.4 V

The low minimum supply voltage enhances energy efficiency, making it suitable for battery-powered devices.

Maximum Operating Temperature: 85 °C

The ability to operate at temperatures up to 85 °C means this product can function effectively in challenging environmental conditions.

Minimum Operating Temperature: -40 °C

A minimum operating temperature of -40 °C ensures reliability in harsh climates and industrial environments.

Terminal Finish: TIN SILVER COPPER

The tin-silver-copper terminal finish provides excellent solderability and resistance to corrosion, ensuring long-lasting performance.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient thermal dissipation and easier mounting on PCBs.

Maximum Seated Height: 1.16 mm

A low maximum seated height helps in maintaining a low profile in compact device designs.

Width: 3 mm

The 3 mm width provides flexibility in design without sacrificing robustness and connectivity.

Maximum Time At Peak Reflow Temperature: 30 s

A maximum time of 30 seconds at peak reflow temperature helps ensure proper soldering without damaging the chip.

Peak Reflow Temperature: 260 °C

Supporting a peak reflow temperature of 260 °C aligns with modern soldering techniques, ensuring compatibility with advanced manufacturing processes.

Length: 3 mm

A compact length of 3 mm contributes to the overall space-saving design, ideal for small form-factor applications.

Temperature Grade: INDUSTRIAL

Being rated for industrial temperature grades substantiates its robustness and reliability for demanding applications.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, making it suitable for a variety of applications.

Terminal Form: BALL

Ball terminal form enhances reliability in soldering and helps in better electrical performance.

Nominal Supply Voltage: 1.65 V

A nominal supply voltage of 1.65 V makes this IC ideal for low-voltage applications, enhancing energy efficiency.

Terminal Pitch: 0.5 mm

The 0.5 mm terminal pitch allows for high-density designs, providing flexibility for board layout.

Moisture Sensitivity Level (MSL): 3

MSL 3 indicates that the product is moderately sensitive to moisture, requiring suitable handling and storage to ensure reliability.

Interface IC Type: INTERFACE CIRCUIT

As an interface circuit IC, it provides essential connectivity between different components, ensuring seamless communication within electronic systems.

Technical Specifications

Other Function Interface ICs ST6G3238NETBR attributes and parameters. Explore more Other Function Interface ICs devices from STMicroelectronics

Specs

Interface IC Type:

JESD-30 Code:

S-PBGA-B25

JESD-609 Code:

e1

Length:

3 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

25

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.16 mm

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

1.4 V

Nominal Supply Voltage:

1.65 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

ST6G3238NETBR Interface ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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