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SMA661AS

STMicroelectronics

SMA661AS by STMicroelectronics

SMA661AS by STMicroelectronics is a narrow band low power RF amplifier with a gain of 18 dB, operating b/w 1500 MHz and 1650 MHz. It features a compact surface mount design and operates within -40 °C to 85 °C. Ideal for RF applications requiring reliable performance in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,510 parts In-Stock

1+ parts

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2,510

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Vyrian

USA . 1,556 parts In-Stock

1+ parts

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1,556

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Anansix

USA . 138 parts In-Stock

1+ parts

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100+ parts

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138

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 416 parts In-Stock

1+ parts

$1.240

100+ parts

-

1k+ parts

$1.116

10k+ parts

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416

$1.240

-

$1.116

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MKK Technologies

India . 620 parts In-Stock

1+ parts

$2.332

100+ parts

-

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620

$2.332

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DigiPath Technology Company

USA . 620 parts In-Stock

1+ parts

$2.332

100+ parts

-

1k+ parts

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620

$2.332

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Parana Technologies

USA . 1,066 parts In-Stock

1+ parts

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100+ parts

$1.483

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10k+ parts

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1,066

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$1.483

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Corphita

USA . 311 parts In-Stock

1+ parts

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311

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Overview

Elevate your RF applications with the SMA661AS from STMicroelectronics, a trusted leader in semiconductor innovation. This narrow band low-power amplifier delivers exceptional performance in demanding environments, ensuring reliable signal integrity from -40 °C to 85 °C. Designed for seamless integration and superior efficiency, it’s perfect for communications and automotive systems, offering unmatched quality that empowers your projects and enhances your competitive edge. Experience the STMicroelectronics advantage today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials ensures durability and corrosion resistance, making the product suitable for various environmental conditions.

Construction: COMPONENT

As a component-level device, this amplifier can easily integrate into existing RF and microwave systems, providing flexibility for designers.

Power Supplies: 2.7 V

The low voltage requirement of 2.7 V allows for easy power supply integration and is energy-efficient, reducing overall power consumption.

No. of Terminals: 6

With 6 terminals, this product offers sufficient connectivity options, ensuring easy integration into circuit designs and enhancing layout flexibility.

Maximum Operating Temperature: 85 °C

An extended maximum operating temperature of 85 °C allows this amplifier to function reliably in high-temperature environments, making it versatile for different applications.

Minimum Operating Temperature: -40 °C

The capability to operate at temperatures as low as -40 °C ensures reliable performance in challenging and extreme weather conditions.

Technology: BICMOS

Utilizing BICMOS technology combines the advantages of both bipolar and CMOS transistors, offering high speed and low power consumption, ideal for RF applications.

RF or Microwave Device Type: NARROW BAND LOW POWER

Being a narrow band low power amplifier makes this device optimal for applications that require efficient signal amplification within specific frequency ranges.

Characteristic Impedance: 50 ohm

A characteristic impedance of 50 ohms is standard in RF applications, ensuring compatibility with a wide range of RF components and systems.

Gain: 18 dB

The 18 dB gain provides sufficient amplification for weak signals, enhancing the overall performance of communication systems, especially in narrow band applications.

Minimum Operating Frequency: 1500 MHz

Starting at a minimum frequency of 1500 MHz, this amplifier is well-suited for a variety of modern RF applications in telecommunications and data systems.

Mounting Feature: SURFACE MOUNT

Surface mount technology allows for compact designs and automated assembly, improving manufacturing efficiency and reducing space on printed circuit boards.

Maximum Operating Frequency: 1650 MHz

With a maximum frequency of 1650 MHz, this amplifier supports high-speed applications and is ideal for radio communication, ensuring signal integrity and clarity.

Technical Specifications

RF & Microwave Amplifiers SMA661AS attributes and parameters. Explore more RF & Microwave Amplifiers devices from STMicroelectronics

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

18 dB

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Frequency:

1650 MHz

Minimum Operating Frequency:

1500 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

FL6,.047,20

Power Supplies (V):

2.7

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Technology:

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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