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M95640-BN6P

STMicroelectronics

M95640-BN6P by STMicroelectronics

M95640-BN6P from STMicroelectronics is a 8Kx8 EEPROM with a 5V supply, ideal for industrial applications. It features synchronous operation at up to 20 MHz and offers hardware/software write protection. With an endurance of 1M cycles, it's perfect for reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,097 parts In-Stock

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4,097

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Vyrian

USA . 2,484 parts In-Stock

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2,484

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Anansix

USA . 870 parts In-Stock

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870

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 901 parts In-Stock

1+ parts

$5.330

100+ parts

-

1k+ parts

$4.797

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901

$5.330

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$4.797

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MKK Technologies

India . 302 parts In-Stock

1+ parts

$10.024

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302

$10.024

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DigiPath Technology Company

USA . 302 parts In-Stock

1+ parts

$10.024

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302

$10.024

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Corphita

USA . 3,251 parts In-Stock

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Parana Technologies

USA . 2,230 parts In-Stock

1+ parts

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$6.373

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2,230

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$6.373

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Overview

Unlock endless possibilities with the M95640-BN6P EEPROM from STMicroelectronics, a leader in cutting-edge semiconductor technology. This robust memory solution offers unparalleled reliability and remarkable endurance, making it perfect for various applications like industrial automation, IoT devices, and consumer electronics. With superior write protection and exceptional performance in harsh environments, the M95640-BN6P ensures your data is safe and accessible whenever you need it. Elevate your projects today with STMicroelectronics' trusted quality!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and resistance to environmental factors, making it suited for industrial applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space on PCBs, facilitating easier integration into designs.

Operating Mode: SYNCHRONOUS

Synchronous operation improves data transfer timing, resulting in faster read/write cycles and better performance.

Nominal Supply Voltage / Vsup (V): 5

Designed to operate at a common supply voltage, it simplifies design requirements for a wide range of applications.

Power Supplies (V): 5

Single voltage requirement enhances compatibility with existing electronic systems, reducing the need for additional components.

No. of Terminals: 8

The 8-terminal design is typical for various applications, optimizing connection points while aiding physical design strategies.

Package Style (Meter): IN-LINE

In-line packaging is suitable for a variety of board designs, allowing for straightforward integration into both new and existing circuits.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this EEPROM is reliable for use in demanding environments.

Organization: 8KX8

The 8Kx8 organization provides ample storage for applications requiring moderate data retention, enhancing versatility.

Minimum Operating Temperature: -40 °C

A minimum operating temperature of -40 °C ensures functionality in extreme cold conditions, making it ideal for industrial applications.

Terminal Finish: MATTE TIN

Matte tin finish offers good solderability and reduces the risk of tin whisker growth, ensuring long-term reliability.

Terminal Position: DUAL

Dual terminal position allows for flexible layout options in PCB design, facilitating easier routing.

Write Protection: HARDWARE/SOFTWARE

The inclusion of both hardware and software write protection enhances data integrity, crucial for critical applications.

Maximum Seated Height: 5.33 mm

The compact seated height ensures it can fit into tighter spaces, which is beneficial for space-constrained designs.

Maximum Clock Frequency (fCLK): 20 MHz

A 20 MHz clock frequency supports faster data transfer rates, improving the speed of operations in applications.

Width: 7.62 mm

A width of 7.62 mm allows efficient use of board space while maintaining performance.

Minimum Supply Voltage (Vsup): 4.5 V

A minimum supply voltage of 4.5 V ensures compatibility with a wide spectrum of existing voltage rails.

Length: 9.27 mm

The length of 9.27 mm contributes to a compact footprint, optimizing PCB real estate.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature rating guarantees reliability and performance in harsh conditions, ideal for industrial applications.

Technology: CMOS

CMOS technology provides low power consumption, improving energy efficiency in electronic designs.

Parallel or Serial: SERIAL

Serial communication allows for simpler circuit design with fewer pin requirements, streamlining integration.

Terminal Form: THROUGH-HOLE

Through-hole design enhances mechanical stability, making it suitable for applications with physical stress.

Maximum Supply Current: 5 mA

With a maximum supply current of 5 mA, this EEPROM is energy efficient, ideal for battery-operated devices.

No. of Words: 8192 words

With storage for 8192 words, it offers sufficient memory for a variety of applications without sacrificing performance.

Memory Width: 8

An 8-bit memory width supports popular data sizes in applications, facilitating streamlined data processing.

No. of Words Code: 8K

The 8K coding provides a clear indication of available data storage, ensuring easy reference for developers.

Maximum Supply Voltage (Vsup): 5.5 V

The ability to support up to 5.5 V supply allows for flexibility with power sources while ensuring safety margins.

Endurance: 1000000 Write/Erase Cycles

An endurance rating of 1 million write/erase cycles ensures longevity, which is critical for applications requiring frequent updates.

Serial Bus Type: SPI

Supports SPI bus type for fast and efficient communication, commonly used in high-speed applications.

Maximum Write Cycle Time (tWC): 5 ms

A maximum write cycle time of 5 ms enables quick data updates, enhancing the overall responsiveness of the system.

Memory Density: 65536 bit

With a memory density of 65536 bits, it is suitable for storing moderate amounts of data, making it versatile for various applications.

Memory IC Type: EEPROM

As an EEPROM, it retains data without power, making it essential for applications requiring non-volatile storage.

Maximum Standby Current: 0.000002 Amp

The ultra-low maximum standby current ensures minimal power consumption during idle periods, making it ideal for battery-saving designs.

Technical Specifications

EEPROM M95640-BN6P attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Additional Features:

1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

Maximum Clock Frequency (fCLK):

20 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Length:

9.27 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.33 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000002 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M95640-BN6P Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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