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M93C56-RDW6TP

STMicroelectronics

M93C56-RDW6TP by STMicroelectronics

M93C56-RDW6TP by STMicroelectronics is a 2048-bit EEPROM with a synchronous operating mode and a max clock frequency of 1 MHz. It features an industrial temperature grade, supporting -40 °C to 85°C, and offers software write protection. Ideal for applications requiring reliable data storage in compact designs, it operates at supply voltages b/w 1.8V and 5.5V.

Median Price

$0.228

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Avnet

USA . 16,000 parts In-Stock

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16,000

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Digiode

USA . 2,819 parts In-Stock

1+ parts

$0.228

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2,819

$0.228

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Chip Stock

USA . 19,500 parts In-Stock

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19,500

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Vyrian

USA . 12,617 parts In-Stock

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12,617

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Anansix

USA . 1,679 parts In-Stock

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1,679

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Distributors (Availability)

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Corphita

USA . 531 parts In-Stock

1+ parts

$0.216

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-

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531

$0.216

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IDEA Electronic Components Group

UK . 572 parts In-Stock

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$4.412

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$3.971

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572

$4.412

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$3.971

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MKK Technologies

India . 1,003 parts In-Stock

1+ parts

$8.297

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1,003

$8.297

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DigiPath Technology Company

USA . 1,003 parts In-Stock

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$8.297

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1,003

$8.297

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Lixinc

USA . 14,188 parts In-Stock

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14,188

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iodParts Technologies Inc.

India . 3,990 parts In-Stock

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3,990

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Parana Technologies

USA . 1,884 parts In-Stock

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$5.276

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1,884

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$5.276

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Overview

Unlock unparalleled reliability and performance with the M93C56-RDW6TP EEPROM from STMicroelectronics. Renowned for their commitment to excellence, STMicroelectronics ensures this product delivers exceptional data retention and durability across diverse applications, from automotive systems to industrial controls. Enjoy the peace of mind that comes with robust write protection and a wide operating temperature range, all in a compact design that fits seamlessly into your projects, enhancing efficiency and longevity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body provides durability and protection against environmental factors, ensuring a longer lifespan.

Surface Mount: YES

Surface mount capability allows for efficient use of space on circuit boards, enabling compact designs.

Package Shape: RECTANGULAR

The rectangular shape facilitates easier integration into various applications and PCB designs.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data access and processing, improving overall system efficiency.

Nominal Supply Voltage / Vsup (V): 5

A nominal supply voltage of 5V is standard, offering compatibility with a wide range of electronic devices.

Power Supplies (V): 2/5

Dual voltage capability (2V and 5V) enhances flexibility in design and allows use in varied applications.

No. of Terminals: 8

Eight terminals provide a balance between functionality and space, ensuring efficient data handling.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline and thin profile design enables space-efficient placement on PCBs, making it suitable for compact systems.

Alternate Memory Width: 8

An 8-bit memory width allows for efficient data storage and manipulation, optimizing performance in various applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this EEPROM can reliably function in warmer environments.

Organization: 128X16

A 128x16 organization supports efficient data retrieval and storage, fitting various computational needs.

Minimum Operating Temperature: -40 °C

Operating at temperatures as low as -40 °C ensures reliability in harsh environmental conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold finish enhances corrosion resistance and ensures reliable electrical connectivity.

Terminal Position: DUAL

Dual terminal positioning allows for versatile installation options, catering to different circuit layouts.

Write Protection: SOFTWARE

Software-based write protection provides security against unintended data modifications, enhancing data integrity.

Maximum Seated Height: 1.2 mm

A maximum seated height of 1.2 mm ensures compatibility with low-profile designs, ideal for compact electronics.

Maximum Clock Frequency (fCLK): 1 MHz

A clock frequency of up to 1 MHz allows for faster data processing, improving overall system performance.

Width: 3 mm

A compact width of 3 mm minimizes space requirements on circuit boards, beneficial for space-constrained designs.

Minimum Supply Voltage (Vsup): 1.8 V

With a minimum supply voltage of 1.8V, the EEPROM is suitable for battery-operated and low-power devices.

Length: 4.4 mm

A length of 4.4 mm contributes to an overall small footprint, facilitating integration into tight spaces.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, this EEPROM is built to withstand demanding operating conditions.

Technology: CMOS

CMOS technology ensures low power consumption and high performance, making it ideal for battery-powered devices.

Parallel or Serial: SERIAL

The serial interface allows for reduced pin count and simpler connectivity, streamlining design and installation.

Terminal Form: GULL WING

Gull wing terminals enable easy soldering and reliability, crucial for high-quality connections on PCBs.

Maximum Supply Current: 2 mA

A maximum supply current of just 2 mA translates to lower power consumption, enhancing the viability for low-power applications.

No. of Words: 128 words

With 128 words, the EEPROM can store sufficient data for various applications without consuming excessive space.

Memory Width: 16

A memory width of 16 bits allows the device to handle larger data efficiently, ensuring better performance.

Minimum Data Retention Time: 40

A minimum data retention time of 40 years ensures long-term data integrity and reliability.

Terminal Pitch: 0.65 mm

A terminal pitch of 0.65 mm allows for compact layouts while still ensuring manufacturability.

No. of Words Code: 128

The ability to store 128 words expands the range of applications, from simple controls to more complex systems.

Maximum Supply Voltage (Vsup): 5.5 V

A maximum supply voltage of 5.5 V provides flexibility in design and compatibility with various power sources.

Endurance: 1000000 Write/Erase Cycles

With an endurance of 1 million write/erase cycles, this EEPROM is highly reliable for frequent data updates.

Serial Bus Type: MICROWIRE

The MICROWIRE serial bus type offers a simple and effective communication protocol, enhancing integration ease.

Maximum Write Cycle Time (tWC): 10 ms

A fast maximum write cycle time of 10 ms allows for swift data updates, improving overall system responsiveness.

Memory Density: 2048 bit

2048 bits of memory density balance storage capacity with size, making it suitable for various embedded applications.

Memory IC Type: EEPROM

As an EEPROM, this device offers non-volatile storage, retaining data without requiring power, ideal for critical application settings.

Maximum Standby Current: 0.000002 Amp

An ultra-low maximum standby current ensures that the device is energy-efficient, making it suitable for battery-operated devices.

Technical Specifications

EEPROM M93C56-RDW6TP attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Alternate Memory Width:

8

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.4 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

128 words

No. of Words Code:

128

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Serial Bus Type:

MICROWIRE

Maximum Standby Current:

.000002 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

SOFTWARE

Trade Compliance

M93C56-RDW6TP Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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