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M2732AF6

STMicroelectronics

M2732AF6 by STMicroelectronics

STMicroelectronics M2732AF6 EPROM features 4KX8 organization, 3-STATE output, and 32768-bit memory density. It operates in asynchronous mode with a programming voltage of 21V. Ideal for industrial applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

LIBRA Elektronik GmbH

Germany . 42,046 parts In-Stock

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42,046

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Anansix

USA . 1,970 parts In-Stock

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1,970

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Digiode

USA . 1,241 parts In-Stock

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1,241

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Vyrian

USA . 552 parts In-Stock

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552

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,677 parts In-Stock

1+ parts

$3.219

100+ parts

-

1k+ parts

$2.897

10k+ parts

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1,677

$3.219

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$2.897

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MKK Technologies

India . 1,407 parts In-Stock

1+ parts

$6.053

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1,407

$6.053

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DigiPath Technology Company

USA . 1,407 parts In-Stock

1+ parts

$6.053

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1,407

$6.053

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Corphita

USA . 3,252 parts In-Stock

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3,252

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Parana Technologies

USA . 1,841 parts In-Stock

1+ parts

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$3.849

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1,841

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$3.849

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Kepictronics

USA . 80 parts In-Stock

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80

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Assy Fe

Spain . 28 parts In-Stock

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28

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Overview

Experience the reliability and precision of the M2732AF6 EPROM from STMicroelectronics, a trusted manufacturer known for producing high-quality electronic components. Ideal for industrial applications, this rectangular ceramic and glass-sealed package offers a nominal supply voltage of 5V and features a 4Kx8 organization with 3-STATE output characteristics. With a wide operating temperature range and asynchronous operating mode, this product ensures optimal performance in challenging environments. Unlock the value of this EPROM for your projects today and enjoy the benefits of its advanced technology and durable construction.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body material ensures durability and reliability, making this EPROM suitable for rugged industrial environments.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and independent operation, providing versatility in various applications.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with standard power sources, making integration into existing systems easier.

No. of Words: 4096 words

With a large memory capacity of 4096 words, this EPROM can store a significant amount of data, suitable for complex applications.

Technology: NMOS

The NMOS technology offers fast access times and low power consumption, making this EPROM efficient and reliable.

Technical Specifications

EPROM M2732AF6 attributes and parameters. Explore more EPROM devices from STMicroelectronics

Specs

Maximum Access Time:

250 ns

Additional Features:

21V PROGRAMMING VOLTAGE

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T24

JESD-609 Code:

e0

Length:

31.75 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

21

Qualification:

Not Qualified

Maximum Seated Height:

5.715 mm

Sub-Category:

EPROMs

Maximum Supply Current:

125 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

NMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

M2732AF6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

NSN

5962-01-349-6381, 5962013496381

NIIN

013496381

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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