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L6386

STMicroelectronics

L6386 by STMicroelectronics

L6386 by STMicroelectronics is a MOSFET gate driver with a max supply voltage of 17V and nominal voltage of 15V. It features a turn-on time of 0.015us and turn-off time of 0.015us, making it ideal for high side driver applications in BCDMOS technology. The package style is in-line with 14 terminals and a terminal pitch of 2.54mm, suitable for through-hole mounting at a peak reflow temperature of 245 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,943 parts In-Stock

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3,943

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Digiode

USA . 3,522 parts In-Stock

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3,522

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Anansix

USA . 423 parts In-Stock

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423

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ComSIT Distribution GmbH

Germany . 50 parts In-Stock

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50

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Cyclops Electronics Ltd

UK . 30 parts In-Stock

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30

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LWI Electronics Inc

India . 3 parts In-Stock

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IDEA Electronic Components Group

UK . 1,909 parts In-Stock

1+ parts

$2.120

100+ parts

-

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$1.908

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1,909

$2.120

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$1.908

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MKK Technologies

India . 1,309 parts In-Stock

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$3.986

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1,309

$3.986

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DigiPath Technology Company

USA . 1,309 parts In-Stock

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$3.986

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$3.986

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Microchip USA

USA . 266 parts In-Stock

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$7.738

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266

$7.738

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AZTECH Wire

Italy . 331 parts In-Stock

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$10.840

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331

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Kepictronics

USA . 5,000 parts In-Stock

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Vigor

Singapore . 2,500 parts In-Stock

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Corphita

USA . 2,167 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,884 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,256 parts In-Stock

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Assy Fe

Spain . 1,087 parts In-Stock

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Perfect Parts

USA . 280 parts In-Stock

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Parana Technologies

USA . 81 parts In-Stock

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$2.534

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81

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$2.534

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Overview

Elevate your power management solutions with the STMicroelectronics L6386 MOSFET Gate Driver. Crafted by a trusted manufacturer known for top-notch quality, this driver offers seamless integration and outstanding performance in various applications. With a maximum supply voltage of 17V and nominal output peak current limit of 0.65A, this driver ensures reliable operation and efficiency. Say goodbye to power management challenges and say hello to optimized performance with the L6386.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components, ensuring a long lifespan for the product.

Maximum Supply Voltage: 17 V

With a high maximum supply voltage of 17V, this MOSFET gate driver can handle a wide range of power supply requirements, making it versatile for different applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space and easy integration into existing electronic systems.

Power Supplies (V): 15

The 15V nominal supply voltage ensures stable and reliable performance for the product.

No. of Terminals: 14

The 14 terminals provide ample connectivity options for interfacing with other components in a circuit.

Terminal Finish: TIN

The TIN terminal finish helps prevent oxidation and ensures good electrical conductivity for optimal performance.

Width: 7.62 mm

The compact width of 7.62mm allows for easy integration into tight spaces or on PCBs with limited real estate.

High Side Driver: YES

Having a high side driver capability makes this MOSFET gate driver suitable for applications where high voltage switching is required.

Nominal Supply Voltage: 15 V

The 15V nominal supply voltage provides a stable operating point for the gate driver, ensuring consistent performance.

Turn-on Time: 0.015 us

With a fast turn-on time of 0.015 microseconds, this gate driver can quickly switch the connected MOSFETs, reducing power losses and improving efficiency.

Nominal Output Peak Current Limit: 0.65 A

The 0.65A peak current limit ensures that the connected MOSFETs are protected from excessive current flow, preventing damage to the components.

Technology: BCDMOS

The BCDMOS technology used in this gate driver offers a combination of bipolar, CMOS, and DMOS technologies, providing high efficiency and performance for various applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form factor allows for easy soldering onto a PCB, ensuring secure connections and reliable operation.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Being a half-bridge based MOSFET driver, this product is suitable for driving half-bridge configurations, providing efficient control over MOSFET switching.

Technical Specifications

MOSFET Gate Drivers L6386 attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e3

No. of Functions:

1

No. of Terminals:

14

Nominal Output Peak Current Limit:

.65 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

245

Power Supplies (V):

15

Qualification:

Not Qualified

Maximum Seated Height:

5.1 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

17 V

Nominal Supply Voltage:

15 V

Surface Mount:

NO

Technology:

BCDMOS

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Turn-off Time:

.015 us

Turn-on Time:

.015 us

Width:

7.62 mm

Trade Compliance

L6386 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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