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L6388E

STMicroelectronics

L6388E by STMicroelectronics

STMicroelectronics L6388E is a BCD technology MOSFET gate driver with 15V nominal voltage and 0.65A output peak current limit. It features a turn-on time of 0.3us and turn-off time of 0.22us, suitable for half bridge based applications requiring high side drivers. The package style is in-line with 8 terminals and max supply voltage of 17V.

Median Price

$1.050

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 177 parts In-Stock

1+ parts

$0.729

100+ parts

$0.490

1k+ parts

$0.438

10k+ parts

-

177

$0.729

$0.490

$0.438

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DigiKey

USA . 190 parts In-Stock

1+ parts

$1.150

100+ parts

$0.667

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-

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190

$1.150

$0.667

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Element14

Singapore . 1,946 parts In-Stock

1+ parts

$2.310

100+ parts

$1.670

1k+ parts

$1.380

10k+ parts

-

1,946

$2.310

$1.670

$1.380

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Future Electronics

Canada . 250 parts In-Stock

1+ parts

-

100+ parts

$1.050

1k+ parts

$0.950

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250

-

$1.050

$0.950

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Verical

USA . 177 parts In-Stock

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-

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$0.716

177

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$0.716

Distributors (In-Stock)

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Digiode

USA . 174 parts In-Stock

1+ parts

$0.674

100+ parts

-

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174

$0.674

-

-

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$1.135

100+ parts

-

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100

$1.135

-

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Chip Stock

USA . 9,480 parts In-Stock

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-

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9,480

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Vyrian

USA . 6,474 parts In-Stock

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6,474

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Anansix

USA . 1,201 parts In-Stock

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1,201

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ComSIT Distribution GmbH

Germany . 950 parts In-Stock

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950

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ComSIT USA

USA . 950 parts In-Stock

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950

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IBS Electronics

USA . 250 parts In-Stock

1+ parts

-

100+ parts

$1.473

1k+ parts

$1.332

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250

-

$1.473

$1.332

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Elcom Components

USA . 55 parts In-Stock

1+ parts

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55

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Distributors (Availability)

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Ampacity Inc.

Singapore . 201 parts In-Stock

1+ parts

$0.451

100+ parts

-

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201

$0.451

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Corphita

USA . 4,259 parts In-Stock

1+ parts

$0.639

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4,259

$0.639

-

-

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Continental Prestige Electronics

USA . 4,934 parts In-Stock

1+ parts

$1.135

100+ parts

-

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$1.112

4,934

$1.135

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-

$1.112

Argo Parts USA

USA . 3,302 parts In-Stock

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$1.135

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-

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3,302

$1.135

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Netroflash

USA . 50 parts In-Stock

1+ parts

$1.135

100+ parts

-

1k+ parts

$1.078

10k+ parts

$1.055

50

$1.135

-

$1.078

$1.055

Microchip USA

USA . 447 parts In-Stock

1+ parts

$3.000

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447

$3.000

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IDEA Electronic Components Group

UK . 800 parts In-Stock

1+ parts

$7.347

100+ parts

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$6.612

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800

$7.347

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$6.612

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MKK Technologies

India . 1,723 parts In-Stock

1+ parts

$13.816

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1,723

$13.816

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DigiPath Technology Company

USA . 1,723 parts In-Stock

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$13.816

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1,723

$13.816

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Kepictronics

USA . 8,000 parts In-Stock

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Lixinc

USA . 7,040 parts In-Stock

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Perfect Parts

USA . 3,637 parts In-Stock

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Vigor

Singapore . 2,642 parts In-Stock

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Parana Technologies

USA . 2,172 parts In-Stock

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$8.785

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$8.785

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Infinite Electronics LLP (Excess)

. 2,006 parts In-Stock

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2,006

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Overview

Enhance the performance of your power management systems with the STMicroelectronics L6388E MOSFET Gate Driver. Manufactured by a trusted industry leader, this versatile component offers reliable and efficient power control solutions for a wide range of applications. With its high side driver capability and advanced BCD technology, the L6388E ensures optimal performance and precision in every use. Experience seamless integration, enhanced functionality, and unparalleled value with this top-of-the-line MOSFET gate driver. Elevate your projects to new heights with the exceptional quality and benefits of the L6388E from STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components, ensuring durability and reliability.

Maximum Supply Voltage: 17 V

Allows for compatibility with a wide range of power supply voltages, making it versatile for different applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into existing systems.

Power Supplies (V): 15

Suitable for applications requiring a 15V power supply, ensuring efficient performance.

No. of Terminals: 8

Sufficient number of terminals for connecting various components and peripherals.

Package Style (Meter): IN-LINE

In-line package style allows for space-saving installation, ideal for compact designs.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit configurations and connections.

Maximum Seated Height: 5.08 mm

Low profile design enables easy integration into tight spaces or crowded PCB layouts.

Width: 7.62 mm

Compact width allows for efficient use of space on the PCB.

High Side Driver: YES

Inclusion of a high side driver simplifies the design and control of high-side power switches.

Technology: BCD

BCD technology provides high performance and reliability in driving MOSFETs for various applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form facilitates easy soldering and secure connections on the PCB.

Nominal Supply Voltage: 15 V

Matching the nominal supply voltage of 15V ensures optimal performance under typical operating conditions.

Turn-on Time: 0.3 us

Fast turn-on time enhances the responsiveness and efficiency of the gate driver.

Terminal Pitch: 2.54 mm

Standard terminal pitch simplifies the PCB layout and assembly process.

Nominal Output Peak Current Limit: 0.65 A

Adequate peak current limit ensures safe operation and protects the driver circuit from overloading.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Half bridge based IC interface provides efficient control and drive capability for MOSFETs in bridge configurations.

Turn-off Time: 0.22 us

Fast turn-off time enhances the switching speed and performance of the gate driver.

Technical Specifications

MOSFET Gate Drivers L6388E attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDIP-T8

No. of Functions:

1

No. of Terminals:

8

Nominal Output Peak Current Limit:

.65 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

15

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

17 V

Nominal Supply Voltage:

15 V

Surface Mount:

NO

Technology:

BCD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.22 us

Turn-on Time:

.3 us

Width:

7.62 mm

Trade Compliance

L6388E Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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