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L6387E

STMicroelectronics

L6387E by STMicroelectronics

STMicroelectronics L6387E is a MOSFET gate driver with 17V max supply voltage, 15V nominal voltage, and 0.65A output peak current limit. It features BCD technology, half-bridge interface IC type, and is ideal for applications requiring high side drivers in various electronic systems.

Median Price

$1.370

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Future Electronics

Canada . 935 parts In-Stock

1+ parts

-

100+ parts

$1.370

1k+ parts

$1.300

10k+ parts

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935

-

$1.370

$1.300

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,413 parts In-Stock

1+ parts

$1.482

100+ parts

-

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3,413

$1.482

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-

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Nova Conductors

Japan . 20 parts In-Stock

1+ parts

$1.842

100+ parts

-

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20

$1.842

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Chip Stock

USA . 7,340 parts In-Stock

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7,340

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Vyrian

USA . 3,879 parts In-Stock

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3,879

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Anansix

USA . 1,544 parts In-Stock

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1,544

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ACDS - Activité Composants Distribution Service

France . 1,000 parts In-Stock

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1,000

-

-

-

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IBS Electronics

USA . 935 parts In-Stock

1+ parts

-

100+ parts

$1.717

1k+ parts

$1.630

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-

935

-

$1.717

$1.630

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ComSIT Distribution GmbH

Germany . 750 parts In-Stock

1+ parts

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750

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LittleDiode

UK . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 792 parts In-Stock

1+ parts

$1.330

100+ parts

-

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792

$1.330

-

-

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Corphita

USA . 379 parts In-Stock

1+ parts

$1.404

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-

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379

$1.404

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Continental Prestige Electronics

USA . 4,389 parts In-Stock

1+ parts

$1.842

100+ parts

-

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$1.805

4,389

$1.842

-

-

$1.805

Argo Parts USA

USA . 3,711 parts In-Stock

1+ parts

$1.842

100+ parts

-

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3,711

$1.842

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$1.842

100+ parts

-

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1,000

$1.842

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Aztec Data Supply Inc.

USA . 3,697 parts In-Stock

1+ parts

$2.122

100+ parts

-

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3,697

$2.122

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Microchip USA

USA . 393 parts In-Stock

1+ parts

$5.099

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393

$5.099

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Corohmni

South Africa . 652 parts In-Stock

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$5.574

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652

$5.574

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IDEA Electronic Components Group

UK . 462 parts In-Stock

1+ parts

$7.045

100+ parts

-

1k+ parts

$6.341

10k+ parts

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462

$7.045

-

$6.341

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Advanced Electronics

New Zealand . 23 parts In-Stock

1+ parts

$11.297

100+ parts

$10.280

1k+ parts

$9.264

10k+ parts

-

23

$11.297

$10.280

$9.264

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MKK Technologies

India . 151 parts In-Stock

1+ parts

$13.248

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151

$13.248

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DigiPath Technology Company

USA . 151 parts In-Stock

1+ parts

$13.248

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151

$13.248

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AZTECH Wire

Italy . 676 parts In-Stock

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$16.141

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676

$16.141

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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Lixinc

USA . 7,619 parts In-Stock

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7,619

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Kepictronics

USA . 6,000 parts In-Stock

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6,000

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A-Z Elektronik GmbH

Germany . 5,279 parts In-Stock

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5,279

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Perfect Parts

USA . 5,115 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,519 parts In-Stock

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3,519

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Parana Technologies

USA . 2,188 parts In-Stock

1+ parts

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$8.424

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2,188

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$8.424

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Vigor

Singapore . 2,164 parts In-Stock

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2,164

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Overview

Unlock the power of advanced technology with the L6387E MOSFET Gate Driver from STMicroelectronics. Designed with precision and expertise, this driver ensures optimal performance and reliability in a variety of applications. With a maximum supply voltage of 17V and a nominal output peak current limit of 0.65A, this driver offers unmatched value and benefits to customers looking for high-quality solutions. Whether you're working on automotive, industrial, or consumer electronics projects, the L6387E is the perfect choice for driving MOSFETs with efficiency and precision. Trust STMicroelectronics to deliver cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the MOSFET gate driver, ensuring long-term reliability.

Maximum Supply Voltage: 17 V

Supports a wide range of supply voltages, making it versatile for different applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into existing circuit designs and layouts.

Power Supplies (V): 15

Suitable for applications requiring a supply voltage of 15 volts.

No. of Terminals: 8

Sufficient number of terminals for connecting to various components in the circuit.

Package Style (Meter): IN-LINE

In-line package style makes it easy to mount on a PCB and saves space.

Terminal Position: DUAL

Dual terminal position provides flexibility in connecting to other components or devices.

Maximum Seated Height: 5.08 mm

Low profile design saves space and allows for compact circuit layouts.

Width: 7.62 mm

Compact width makes it suitable for applications with limited space.

High Side Driver: YES

High side driver capability allows for driving MOSFETs in both high and low side configurations.

Technology: BCD

BCD technology offers high efficiency and performance for driving MOSFETs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong and reliable connections on a PCB.

Nominal Supply Voltage: 15 V

Compatible with a nominal supply voltage of 15 volts, making it versatile for various applications.

Terminal Pitch: 2.54 mm

Standard terminal pitch allows for easy integration into existing PCB designs and layouts.

Nominal Output Peak Current Limit: 0.65 A

Capable of handling peak output currents of up to 0.65 A, suitable for driving MOSFETs in a variety of applications.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Half bridge based interface IC type provides efficient and reliable control of MOSFETs in half bridge configurations.

Technical Specifications

MOSFET Gate Drivers L6387E attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDIP-T8

No. of Functions:

1

No. of Terminals:

8

Nominal Output Peak Current Limit:

.65 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

15

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

17 V

Nominal Supply Voltage:

15 V

Surface Mount:

NO

Technology:

BCD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

L6387E Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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