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DMV1500M7

STMicroelectronics

DMV1500M7 by STMicroelectronics

DMV1500M7 by STMicroelectronics is a very fast recovery rectifier diode with a max reverse recovery time of 0.135 µs and can handle up to 6 A output current. It operates at a peak reverse voltage of 1500 V, making it ideal for high-efficiency applications. Its flange mount design ensures easy integration in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,634 parts In-Stock

1+ parts

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2,634

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Digiode

USA . 2,139 parts In-Stock

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2,139

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Anansix

USA . 662 parts In-Stock

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662

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,022 parts In-Stock

1+ parts

$0.101

100+ parts

-

1k+ parts

$0.091

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1,022

$0.101

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$0.091

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MKK Technologies

India . 1,978 parts In-Stock

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$0.190

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1,978

$0.190

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DigiPath Technology Company

USA . 1,978 parts In-Stock

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$0.190

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1,978

$0.190

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Native Components

USA . 288 parts In-Stock

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$5.400

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288

$5.400

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Corphita

USA . 4,725 parts In-Stock

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4,725

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Northwest PG Solutions

USA . 2,318 parts In-Stock

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$5.292

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2,318

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$5.292

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Parana Technologies

USA . 2,168 parts In-Stock

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$0.121

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2,168

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$0.121

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Overview

Unlock unparalleled performance with the DMV1500M7 by STMicroelectronics, a leader in innovative semiconductor solutions. This high-quality rectifier diode is designed for very fast recovery, ensuring efficient operation in demanding applications like power supplies and motor drives. With its robust construction and exceptional reliability, the DMV1500M7 not only enhances your designs but also delivers long-term savings and performance benefits, making it the smart choice for engineers seeking excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making it suitable for various applications.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

This configuration allows for efficient circuit design and simplifies the connection process, providing flexibility in usage.

Maximum Reverse Recovery Time: 0.135 us

The very fast reverse recovery time enhances switching performance and minimizes power losses, making it ideal for high-frequency applications.

Package Shape: RECTANGULAR

The rectangular shape offers a compact footprint, allowing for easier integration into space-constrained designs.

No. of Terminals: 3

Three terminals provide simple connection points for better circuit integration and increased design flexibility.

Package Style (Meter): FLANGE MOUNT

Flange mount style ensures secure mounting and stable connections, which enhances the reliability of the diode in operation.

Application: VERY FAST RECOVERY

Designed for very fast recovery, this diode is perfect for high-speed switching applications, improving overall circuit efficiency.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature enables the diode to function in demanding environments, thereby extending its lifespan and reliability.

Terminal Finish: MATTE TIN

Matte tin finish ensures good solderability and corrosion resistance, leading to improved performance and longevity of connections.

Terminal Position: SINGLE

Single terminal position simplifies the design and integration process, contributing to easier assembly in circuit boards.

Case Connection: ISOLATED

An isolated case connection enables safer operation by preventing unintended paths for current flow, enhancing user safety.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it essential for power supply applications.

Maximum Forward Voltage (VF): 1.55 V

A low forward voltage drop enhances energy efficiency, reducing power loss during operation and improving overall circuit performance.

Maximum Output Current: 6 A

With a maximum output current of 6 A, this diode can handle substantial loads, making it versatile for various applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and are ideal for high-power applications, ensuring reliable connections.

No. of Elements: 2

The presence of two elements allows for more complex rectification and higher reliability in power conversion.

Maximum Repetitive Peak Reverse Voltage: 1500 V

A high maximum peak reverse voltage ensures this diode can handle voltage spikes effectively, making it suitable for harsh electrical environments.

Maximum Non-Repetitive Peak Forward Current: 75 A

This feature provides a wide margin for handling transient currents, enhancing the robustness of the diode in challenging conditions.

Diode Element Material: SILICON

Silicon as the diode element material offers good thermal stability and performance characteristics, making it a standard choice for electronic applications.

Technical Specifications

Diodes & Rectifiers DMV1500M7 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

VERY FAST RECOVERY

Case Connection:

ISOLATED

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.55 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1500 V

Maximum Reverse Recovery Time:

.135 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

DMV1500M7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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