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DMV1500HFD5

STMicroelectronics

DMV1500HFD5 by STMicroelectronics

DMV1500HFD5 by STMicroelectronics is a high-voltage rectifier diode with a max reverse recovery time of 0.125 µs and can handle up to 6 A output current. It operates at temperatures up to 150 °C and supports peak reverse voltages of 1500 V. Ideal for applications requiring very fast recovery in power electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,261 parts In-Stock

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Digiode

USA . 1,497 parts In-Stock

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Anansix

USA . 1,058 parts In-Stock

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1,058

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,234 parts In-Stock

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$0.052

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$0.046

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1,234

$0.052

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MKK Technologies

India . 524 parts In-Stock

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$0.097

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524

$0.097

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DigiPath Technology Company

USA . 524 parts In-Stock

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$0.097

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524

$0.097

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Native Components

USA . 760 parts In-Stock

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$0.567

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760

$0.567

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Northwest PG Solutions

USA . 1,388 parts In-Stock

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$0.624

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$0.624

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AZTECH Wire

Italy . 1,162 parts In-Stock

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$14.500

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Kepictronics

USA . 13,000 parts In-Stock

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Corphita

USA . 1,394 parts In-Stock

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Parana Technologies

USA . 898 parts In-Stock

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$0.062

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Overview

Unlock unmatched performance with the DMV1500HFD5 from STMicroelectronics, a leader in semiconductor innovation. This high-voltage rectifier diode ensures exceptional speed and reliability for your power management needs, making it ideal for demanding applications. Experience superior quality and durability crafted with precision, offering low forward voltage and rapid recovery times. Elevate your designs with a trusted solution that delivers efficiency and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material enhances durability and ensures reliable performance in various environmental conditions.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

This configuration allows for better control and efficiency in applications requiring dual-phase power supply.

Maximum Reverse Recovery Time: 0.125 us

The fast reverse recovery time makes this diode ideal for high-frequency applications, minimizing losses and improving efficiency.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on PCBs, making it suitable for compact designs.

No. of Terminals: 3

Three terminals facilitate versatile connections and configurations, providing ease of integration into various circuits.

Package Style (Meter): FLANGE MOUNT

Flange mount style ensures secure mounting and enhances thermal management, vital for high-power applications.

Application: HIGH VOLTAGE VERY FAST RECOVERY

Designed for high voltage applications with fast recovery, making it ideal for power supplies and motor drives.

Maximum Operating Temperature: 150 °C

A high operating temperature rating ensures reliable performance even in demanding thermal environments.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and protects against oxidation, ensuring long-term reliability.

Terminal Position: SINGLE

Single terminal position facilitates straightforward design and simplifies the manufacturing process.

Case Connection: ISOLATED

Isolated case connection enhances safety and reduces the risk of short circuits in sensitive applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it essential in power conversion applications.

Maximum Forward Voltage (VF): 1.4 V

A low forward voltage drop ensures minimal power loss during operation, contributing to system efficiency.

Maximum Output Current: 6 A

With a maximum output current of 6 A, this diode can handle substantial load currents, suitable for higher power applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical stability and are ideal for high-power applications requiring strong connections.

No. of Elements: 2

The dual-element configuration enhances current capacity and allows for redundancy, improving reliability in critical applications.

Maximum Repetitive Peak Reverse Voltage: 1500 V

A high peak reverse voltage rating makes this diode ideal for use in high-voltage applications, ensuring a wider range of usability.

Maximum Non Repetitive Peak Forward Current: 80 A

This high forward current rating enables the diode to handle surge currents effectively, which is crucial in power electronic circuits.

Diode Element Material: SILICON

Using silicon as the diode element material provides excellent electrical properties and thermal stability.

Technical Specifications

Diodes & Rectifiers DMV1500HFD5 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE VERY FAST RECOVERY

Case Connection:

ISOLATED

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.4 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1500 V

Maximum Reverse Recovery Time:

.125 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

DMV1500HFD5 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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