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DMV1500H

STMicroelectronics

DMV1500H by STMicroelectronics

DMV1500H by STMicroelectronics is a high-voltage fast recovery rectifier diode with a max reverse recovery time of 0.125 µs and can handle up to 1500 V. It features a flange mount design with 3 terminals and operates at temperatures up to 150 °C. Ideal for applications requiring efficient power management, it supports currents up to 6 A.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,806 parts In-Stock

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4,806

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Anansix

USA . 2,169 parts In-Stock

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Digiode

USA . 2,144 parts In-Stock

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2,144

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ECAB

Sweden . 999 parts In-Stock

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999

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IDEA Electronic Components Group

UK . 2,281 parts In-Stock

1+ parts

$0.046

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$0.041

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2,281

$0.046

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$0.041

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MKK Technologies

India . 1,325 parts In-Stock

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$0.086

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1,325

$0.086

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DigiPath Technology Company

USA . 1,325 parts In-Stock

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$0.086

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1,325

$0.086

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A-Z Elektronik GmbH

Germany . 4,695 parts In-Stock

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4,695

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Kepictronics

USA . 4,275 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Alle Elektronik GmbH

Germany . 3,130 parts In-Stock

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Northwest PG Solutions

USA . 2,088 parts In-Stock

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Corphita

USA . 2,014 parts In-Stock

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Parana Technologies

USA . 695 parts In-Stock

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$0.055

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695

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$0.055

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Native Components

USA . 220 parts In-Stock

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Overview

Unlock unparalleled performance with the DMV1500H from STMicroelectronics, a leader in innovation and reliability. This high-voltage fast recovery rectifier is designed to deliver exceptional efficiency in demanding applications. With its robust construction and impressive thermal capabilities, it ensures durability while minimizing power loss. Choose DMV1500H for superior quality and performance that enhances your systems, paving the way for increased productivity and reliability in any project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and protects the diode from environmental damage, ensuring reliability in various applications.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

This configuration allows for more versatile circuit designs, making it suitable for complex applications that require multiple connections.

Maximum Reverse Recovery Time: 0.125 us

A low reverse recovery time contributes to faster switching speeds, making this diode ideal for high-frequency applications.

Package Shape: RECTANGULAR

The rectangular shape aids in efficient space utilization on PCBs, allowing for optimized layouts in electronic designs.

No. of Terminals: 3

Having three terminals simplifies connections while providing stable performance in various configurations.

Package Style (Meter): FLANGE MOUNT

Flange mount style ensures secure attachment and excellent heat dissipation, critical for maintaining performance under high loads.

Application: HIGH VOLTAGE FAST RECOVERY

This product's design for high voltage fast recovery applications makes it suitable for demanding tasks like power supplies and motor drives.

Maximum Operating Temperature: 150 °C

With a high operating temperature limit, this diode can function effectively in harsh environments, enhancing its versatility.

Terminal Finish: MATTE TIN

Matte tin terminal finish improves solderability and ensures reliable electrical connections, vital for long-lasting performance.

Terminal Position: SINGLE

Single terminal positioning simplifies the assembly process and reduces the complexity of the circuit layout.

Case Connection: ISOLATED

Isolated case connection adds safety and prevents unwanted electrical interference, ensuring stable operation in sensitive applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it essential in power rectification circuits.

Maximum Forward Voltage (VF): 1.4 V

A maximum forward voltage of 1.4 V ensures low power loss during operation, which enhances overall circuit efficiency.

Maximum Output Current: 6 A

With a maximum output current of 6 A, this diode can handle significant loads, making it suitable for various high-current applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides strong mechanical stability and ensures reliable connections, especially in high-stress environments.

No. of Elements: 2

Having two elements enhances performance characteristics and allows for increased flexibility in design options.

Maximum Repetitive Peak Reverse Voltage: 1500 V

A high voltage rating of 1500 V allows for use in applications with significant voltage spikes, ensuring resilience and safety.

Maximum Non-Repetitive Peak Forward Current: 80 A

The ability to handle a peak current of 80 A ensures this diode can withstand short bursts of high current, making it suitable for robust applications.

Diode Element Material: SILICON

Silicon as the diode element material offers excellent electrical properties and reliability, making it a standard choice for various diode applications.

Technical Specifications

Diodes & Rectifiers DMV1500H attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE FAST RECOVERY

Case Connection:

ISOLATED

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.4 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1500 V

Maximum Reverse Recovery Time:

.125 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

DMV1500H Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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