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DMV1500LFD5

STMicroelectronics

DMV1500LFD5 by STMicroelectronics

DMV1500LFD5 by STMicroelectronics is a high-voltage, very fast recovery rectifier diode with a max reverse recovery time of 0.17 µs and peak reverse voltage of 1500 V. It features a flange mount design with 3 terminals and operates up to 150 °C. Ideal for applications requiring efficient power management in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,289 parts In-Stock

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Anansix

USA . 1,738 parts In-Stock

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1,738

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Lakeland Logistics Inc

USA . 810 parts In-Stock

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810

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Bristol Electronics

USA . 810 parts In-Stock

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810

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Vyrian

USA . 721 parts In-Stock

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721

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,990 parts In-Stock

1+ parts

$0.050

100+ parts

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1k+ parts

$0.045

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1,990

$0.050

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$0.045

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MKK Technologies

India . 2,127 parts In-Stock

1+ parts

$0.093

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2,127

$0.093

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DigiPath Technology Company

USA . 2,127 parts In-Stock

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$0.093

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2,127

$0.093

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Native Components

USA . 13 parts In-Stock

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$4.925

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13

$4.925

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Corphita

USA . 4,185 parts In-Stock

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4,185

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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Parana Technologies

USA . 1,552 parts In-Stock

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$0.059

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1,552

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$0.059

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Northwest PG Solutions

USA . 265 parts In-Stock

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$4.827

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265

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$4.827

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Overview

Elevate your designs with the DMV1500LFD5 from STMicroelectronics, a leader in innovation and quality. This high-voltage, very fast recovery rectifier diode is crafted for reliability and efficiency, making it ideal for demanding applications. With its robust performance in extreme conditions, this component enhances system reliability, ensuring your projects meet rigorous standards. Trust STMicroelectronics for unparalleled value and benefits that empower your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and resistance to environmental factors, making this diode suitable for various applications.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

This configuration allows for more efficient power distribution and offers better performance in high voltage applications.

Maximum Reverse Recovery Time: 0.17 us

A fast reverse recovery time ensures minimal switching losses, making this diode ideal for high-frequency applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on PCB layouts, facilitating easier integration into designs.

No. of Terminals: 3

Three terminals provide flexibility in circuit design, enabling various configurations and connections.

Package Style (Meter): FLANGE MOUNT

Flange mount packaging enhances mechanical stability and ensures secure mounting in high-vibration environments.

Application: HIGH VOLTAGE VERY FAST RECOVERY

Designed for high voltage applications with very fast recovery, ensuring reliability in demanding conditions.

Maximum Operating Temperature: 150 °C

A high operating temperature rating allows it to function efficiently in demanding thermal environments.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and corrosion resistance, ensuring reliable connections over the lifespan.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and layout, reducing complexity in assembly.

Case Connection: ISOLATED

Isolated case connection enhances safety by reducing the risk of accidental shorts and grounding issues.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is suitable for converting AC to DC, making it essential in power supply applications.

Maximum Forward Voltage (VF): 1.5 V

With a low forward voltage drop, it minimizes power loss and increases efficiency in power circuitry.

Maximum Output Current: 4 A

Capable of handling up to 4 A, providing sufficient current for a wide range of applications without overheating.

Terminal Form: THROUGH-HOLE

Through-hole terminal form ensures a robust mechanical connection and better stability in high-power applications.

No. of Elements: 2

Having 2 elements allows for improved performance and redundancy, ensuring reliable operation.

Maximum Repetitive Peak Reverse Voltage: 1500 V

A high reverse voltage rating makes it suitable for high-voltage applications, providing excellent reliability.

Maximum Non-Repetitive Peak Forward Current: 50 A

The ability to handle high peak forward currents allows it to manage transient loads and spikes effectively.

Diode Element Material: SILICON

Silicon material is widely used for its effective electrical properties, ensuring good performance characteristics.

Technical Specifications

Diodes & Rectifiers DMV1500LFD5 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE VERY FAST RECOVERY

Case Connection:

ISOLATED

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1500 V

Maximum Reverse Recovery Time:

.17 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

DMV1500LFD5 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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