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DMV1500LF5

STMicroelectronics

DMV1500LF5 by STMicroelectronics

DMV1500LF5 by STMicroelectronics is a high-voltage fast recovery rectifier diode with a max reverse recovery time of 0.17 µs and can handle up to 1500 V. It features a flange mount design with 3 terminals, suitable for demanding applications. Operating temp reaches 150 °C, ensuring reliability in various environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,222 parts In-Stock

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4,222

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Digiode

USA . 4,036 parts In-Stock

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4,036

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Anansix

USA . 2,853 parts In-Stock

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2,853

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,234 parts In-Stock

1+ parts

$0.139

100+ parts

-

1k+ parts

$0.125

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1,234

$0.139

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$0.125

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MKK Technologies

India . 2,348 parts In-Stock

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$0.261

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2,348

$0.261

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DigiPath Technology Company

USA . 2,348 parts In-Stock

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$0.261

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2,348

$0.261

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Native Components

USA . 978 parts In-Stock

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$0.357

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$0.342

978

$0.357

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$0.342

Northwest PG Solutions

USA . 1,425 parts In-Stock

1+ parts

$0.392

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$0.346

1,425

$0.392

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$0.346

Component Stockers USA

USA . 778 parts In-Stock

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$99.990

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778

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 28,375 parts In-Stock

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Corphita

USA . 1,097 parts In-Stock

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1,097

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Parana Technologies

USA . 44 parts In-Stock

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$0.166

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44

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$0.166

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Overview

Unlock the potential of your designs with the DMV1500LF5 by STMicroelectronics—an exceptional rectifier diode that ensures high voltage fast recovery for robust applications. Renowned for their quality and reliability, STMicroelectronics delivers unparalleled performance in a compact, flange-mounted package. Whether you're powering industrial machinery or developing cutting-edge electronics, this diode guarantees efficiency and durability, enhancing your projects with superior value and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides excellent protection against environmental factors, ensuring durability and reliability in various applications.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

This configuration enhances flexibility in circuit design and allows for effective use in power management systems.

Maximum Reverse Recovery Time: 0.17 us

A low reverse recovery time makes this diode suitable for high-speed applications, reducing losses and improving efficiency.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into circuit boards, optimizing space and facilitating better thermal management.

No. of Terminals: 3

With three terminals, this diode provides versatility in installation options and improved connectivity in circuit assemblies.

Package Style (Meter): FLANGE MOUNT

Flange mount design ensures secure mounting and stability, which is crucial for high-power applications.

Application: HIGH VOLTAGE FAST RECOVERY

Designed specifically for high voltage fast recovery applications, this product excels in demanding environments, enhancing overall system performance.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows this diode to function effectively in extreme conditions, making it reliable for critical applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers excellent solderability and corrosion resistance, improving long-term reliability in connections.

Terminal Position: SINGLE

A single terminal position simplifies the design and layout for PCB assembly, enhancing manufacturing efficiency.

Case Connection: ISOLATED

Isolated case connection ensures safety and reduces the risk of unwanted shorts, making it suitable for sensitive electronics.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts AC to DC, essential for power supply applications.

Maximum Forward Voltage (VF): 1.8 V

A low forward voltage drop minimizes power loss during operation, contributing to overall energy efficiency.

Maximum Output Current: 4 A

Capable of handling up to 4 A of output current, this diode is well-suited for medium to high power applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and ease of installation in various electronic devices.

No. of Elements: 2

Having two elements ensures high efficiency in handling current, making it reliable for demanding applications.

Maximum Repetitive Peak Reverse Voltage: 1500 V

A high peak reverse voltage rating allows this diode to endure in high voltage environments, reducing the risk of breakdown.

Maximum Non Repetitive Peak Forward Current: 50 A

Its ability to handle 50 A of non-repetitive peak forward current makes it suitable for handling inrush currents without failure.

Diode Element Material: SILICON

Silicon material enhances the diode's thermal characteristics and assures high performance in rectification applications.

Technical Specifications

Diodes & Rectifiers DMV1500LF5 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE FAST RECOVERY

Case Connection:

ISOLATED

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.8 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1500 V

Maximum Reverse Recovery Time:

.17 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

DMV1500LF5 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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