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DMV1500HF5

STMicroelectronics

DMV1500HF5 by STMicroelectronics

DMV1500HF5 by STMicroelectronics is a high-voltage fast recovery rectifier diode with a max reverse recovery time of 0.125 µs and can handle up to 6 A output current. It features a flange mount design and operates at temperatures up to 150 °C. Ideal for applications requiring efficient power management in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,679 parts In-Stock

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3,679

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Anansix

USA . 1,712 parts In-Stock

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1,712

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Digiode

USA . 1,584 parts In-Stock

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1,584

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,971 parts In-Stock

1+ parts

$0.052

100+ parts

-

1k+ parts

$0.046

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-

1,971

$0.052

-

$0.046

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MKK Technologies

India . 343 parts In-Stock

1+ parts

$0.097

100+ parts

-

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343

$0.097

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DigiPath Technology Company

USA . 343 parts In-Stock

1+ parts

$0.097

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343

$0.097

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Native Components

USA . 377 parts In-Stock

1+ parts

$45.362

100+ parts

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$43.548

377

$45.362

-

-

$43.548

Northwest PG Solutions

USA . 363 parts In-Stock

1+ parts

$49.898

100+ parts

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363

$49.898

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Corphita

USA . 4,833 parts In-Stock

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4,833

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Parana Technologies

USA . 2,375 parts In-Stock

1+ parts

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$0.062

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2,375

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$0.062

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Overview

Elevate your designs with the DMV1500HF5 from STMicroelectronics, a leader in innovative semiconductor solutions. This high-voltage fast recovery rectifier diode is engineered for reliability and efficiency, ensuring superior performance in demanding applications. With its robust construction and exceptional thermal handling, it seamlessly enhances power management systems while reducing downtime. Experience the perfect blend of quality and reliability—choose STMicroelectronics for your next project!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides excellent durability and protection against environmental factors, making the diode reliable for long-term applications.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

The series connected and center tap configuration allows for efficient voltage conversion and improved circuit performance, particularly in power applications.

Maximum Reverse Recovery Time: 0.125 us

A fast reverse recovery time ensures minimal switching losses, making it suitable for high-frequency applications and enhancing overall efficiency.

Package Shape: RECTANGULAR

The rectangular package shape is easy to accommodate in various circuit designs, providing flexibility in layout arrangements.

No. of Terminals: 3

With three terminals, this diode supports versatile connections, enabling more complex circuit designs and configurations.

Package Style (Meter): FLANGE MOUNT

The flange mount style ensures secure attachment to heatsinks or circuit boards, improving thermal management during operation.

Application: HIGH VOLTAGE FAST RECOVERY

Designed specifically for high voltage and fast recovery applications, this diode is ideal for energy-efficient power supply solutions.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows the diode to function reliably in demanding environments, increasing overall system robustness.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and prevents corrosion, ensuring reliable electrical connections.

Terminal Position: SINGLE

A single terminal position simplifies design and integration into circuits, making this diode user-friendly.

Case Connection: ISOLATED

An isolated case connection enhances safety and prevents electrical interference, ideal for sensitive applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts alternating current (AC) to direct current (DC), making it essential in power applications.

Maximum Forward Voltage (VF): 1.4 V

A low maximum forward voltage drop optimizes power efficiency during operation, minimizing energy loss in circuits.

Maximum Output Current: 6 A

With a high output current capacity, this diode can handle substantial loads, suitable for applications requiring significant power.

Terminal Form: THROUGH-HOLE

The through-hole terminal form enhances mechanical stability and thermal dissipation, ideal for high-power applications.

No. of Elements: 2

Having two elements supports greater functionality and efficiency in the rectification process, making it a reliable choice for power circuits.

Maximum Repetitive Peak Reverse Voltage: 1500 V

A high peak reverse voltage capability allows the diode to withstand substantial voltage spikes, enhancing durability in robust applications.

Maximum Non-Repetitive Peak Forward Current: 80 A

The ability to handle high non-repetitive peak forward current showcases the diode's resilience to surges, ideal for applications experiencing sudden load changes.

Diode Element Material: SILICON

Silicon as the diode element material provides effective performance characteristics, making it a preferred choice for most electronic applications.

Technical Specifications

Diodes & Rectifiers DMV1500HF5 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE FAST RECOVERY

Case Connection:

ISOLATED

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.4 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1500 V

Maximum Reverse Recovery Time:

.125 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

DMV1500HF5 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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