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BYW29F-50

STMicroelectronics

BYW29F-50 by STMicroelectronics

BYW29F-50 by STMicroelectronics is a single rectifier diode with a max reverse recovery time of 0.035 us and a max output current of 8A. It is designed for efficiency applications, operating at temperatures up to 150 °C. The diode features avalanche technology, a max forward voltage of 1.3V, and a max repetitive peak reverse voltage of 50V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 5,485 parts In-Stock

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Anansix

USA . 2,388 parts In-Stock

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2,388

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Vyrian

USA . 113 parts In-Stock

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113

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,340 parts In-Stock

1+ parts

$0.123

100+ parts

-

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$0.111

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1,340

$0.123

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$0.111

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MKK Technologies

India . 1,315 parts In-Stock

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$0.232

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1,315

$0.232

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DigiPath Technology Company

USA . 1,315 parts In-Stock

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$0.232

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1,315

$0.232

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Native Components

USA . 1,083 parts In-Stock

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$1.343

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1,083

$1.343

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Northwest PG Solutions

USA . 2,274 parts In-Stock

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$1.477

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$1.477

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One Stop Electronics

USA . 173 parts In-Stock

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$2.010

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$2.010

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Corphita

USA . 6,826 parts In-Stock

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UNI Independent Distributors

Spain . 6,209 parts In-Stock

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Parana Technologies

USA . 1,002 parts In-Stock

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$0.147

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Overview

Upgrade your efficiency with the BYW29F-50 by STMicroelectronics, a top-of-the-line rectifier diode that promises high-quality performance. Manufactured by STMicroelectronics, a renowned leader in the industry, this diode is designed for maximum reliability and durability. Ideal for a wide range of applications, this product offers customers value, benefits, and advantages that are unmatched in the market. Say goodbye to inefficiency and hello to enhanced productivity with the BYW29F-50.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and insulation for the diode, ensuring its reliability and longevity.

Config: SINGLE

Single configuration makes it easy to install and manage, ideal for simpler circuit designs.

Maximum Reverse Recovery Time: 0.035 us

Fast reverse recovery time ensures efficient operation and minimal power loss in the circuit.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into various electronic devices and systems.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and makes it easier to interface with other components.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides secure attachment and stable positioning of the diode in the circuit.

Application: EFFICIENCY

Designed specifically for efficiency, making it an excellent choice for applications where energy savings are important.

Maximum Operating Temperature: 150 °C

High operating temperature range allows the diode to function reliably even in demanding environments.

Terminal Finish: MATTE TIN

Matte tin finish on terminals ensures good electrical conductivity and corrosion resistance.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection, reducing the risk of errors.

Case Connection: ISOLATED

Isolated case connection improves safety and prevents electrical interference in the circuit.

Diode Type: RECTIFIER DIODE

Rectifier diode is specifically designed for converting AC to DC, making it suitable for various power supply applications.

Maximum Forward Voltage (VF): 1.3 V

Low forward voltage drop minimizes power loss and improves efficiency in the circuit.

Maximum Output Current: 8 A

High output current rating allows the diode to handle large electrical loads effectively.

Technology: AVALANCHE

Avalanche technology ensures reliable and stable performance even under high voltage conditions.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides a secure and reliable connection to the circuit board.

Maximum Repetitive Peak Reverse Voltage: 50 V

High reverse voltage rating makes it suitable for applications where reverse polarity protection is critical.

Maximum Non Repetitive Peak Forward Current: 80 A

High peak forward current rating allows the diode to handle short-term overloads without damage.

Diode Element Material: SILICON

Silicon diode element material offers good electrical properties and high temperature tolerance for reliable performance.

Technical Specifications

Diodes & Rectifiers BYW29F-50 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, HIGH SURGE CAPABILITY

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BYW29F-50 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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