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BYW29G-200

STMicroelectronics

BYW29G-200 by STMicroelectronics

BYW29G-200 by STMicroelectronics is a single rectifier diode with a max reverse recovery time of 0.035 us and a max output current of 8A. It is designed for efficiency applications, operates at up to 150 °C, and has a max repetitive peak reverse voltage of 200V.

Median Price

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Lifecycle Status

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9

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1k+

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R&J Components

USA . 4,000 parts In-Stock

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Anansix

USA . 2,255 parts In-Stock

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Digiode

USA . 1,094 parts In-Stock

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Velocity Electronics

USA . 432 parts In-Stock

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Vyrian

USA . 423 parts In-Stock

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ECAB

Sweden . 189 parts In-Stock

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Component Electronics Inc.

Canada . 48 parts In-Stock

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ComSIT Distribution GmbH

Germany . 40 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 36 parts In-Stock

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IDEA Electronic Components Group

UK . 616 parts In-Stock

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$0.165

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$0.148

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MKK Technologies

India . 957 parts In-Stock

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$0.310

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DigiPath Technology Company

USA . 957 parts In-Stock

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Component Stockers USA

USA . 301 parts In-Stock

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$99.990

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Kepictronics

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A-Z Elektronik GmbH

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Authorized Procurement Solutions

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Corphita

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Northwest PG Solutions

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Parana Technologies

USA . 1,028 parts In-Stock

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$0.197

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Native Components

USA . 625 parts In-Stock

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Overview

Unlock the potential of your electronic devices with the STMicroelectronics BYW29G-200 diode. Manufactured by a trusted industry leader, this diode offers unparalleled quality and reliability. Ideal for applications requiring high efficiency, this rectifier diode boasts a maximum output current of 8A and a maximum repetitive peak reverse voltage of 200V. With a fast reverse recovery time of just 0.035us, this diode ensures optimal performance in a compact package. Trust STMicroelectronics to deliver cutting-edge technology that enhances the functionality of your products.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good protection and durability, ensuring a longer lifespan for the diode.

Config: SINGLE

Simplicity in configuration makes it easy to integrate into various circuits and systems.

Surface Mount: YES

Can be easily mounted on PCBs, saving space and making assembly more efficient.

Maximum Reverse Recovery Time: 0.035 us

Fast reverse recovery time improves efficiency and performance of the diode.

Package Shape: RECTANGULAR

Rectangular shape offers a practical design for easy placement and installation.

No. of Terminals: 2

Simple two-terminal design simplifies connections and enhances compatibility.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style saves space and allows for dense packaging.

Application: EFFICIENCY

Designed specifically for efficiency applications, ensuring optimal performance in power circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature provides reliability and stability under various conditions.

Terminal Finish: MATTE TIN

Matte tin finish offers good solderability and contact reliability for secure connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and reduces the risk of errors during assembly.

Case Connection: CATHODE

Cathode case connection offers easy identification of polarity for correct installation.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting AC to DC in power supply applications.

Maximum Forward Voltage (VF): 1.15 V

Low forward voltage drop ensures minimal power loss and efficient operation of the diode.

Maximum Output Current: 8 A

High output current capacity enables the diode to handle heavy loads and deliver reliable performance.

Terminal Form: GULL WING

Gull wing terminal form offers mechanical strength and stability during soldering and mounting.

Maximum Repetitive Peak Reverse Voltage: 200 V

High reverse voltage rating provides protection against reverse voltage spikes and surges.

Maximum Non Repetitive Peak Forward Current: 80 A

High non-repetitive peak forward current rating ensures the diode can withstand momentary high currents.

Diode Element Material: SILICON

Silicon diode element material offers good electrical properties and reliability for various applications.

Technical Specifications

Diodes & Rectifiers BYW29G-200 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BYW29G-200 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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