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BYW29-100

Onsemi

BYW29-100 by Onsemi

The Onsemi BYW29-100 is a single rectifier diode with a max reverse recovery time of 0.025 us and a max operating temperature of 150 °C. It has a peak repetitive peak reverse voltage of 100V, making it ideal for high-current applications in various electronic circuits.

Median Price

$0.250

Lifecycle Status

Suppliers In-Stock

29

In-Stock Inventory

1k+

BYW29-100 by Onsemi
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Rochester

USA . 100 parts In-Stock

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$0.250

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$0.235

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$0.213

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$0.213

100

$0.250

$0.235

$0.213

$0.213

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Digiode

USA . 7,056 parts In-Stock

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Ace Electronics

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Forefront Electronics and Design

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American Microsemiconductor Inc.

USA . 124 parts In-Stock

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Vyrian

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Bristol Electronics

USA . 750 parts In-Stock

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$0.487

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ECAB

Sweden . 561 parts In-Stock

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J2 Sourcing AB

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Manoshevitz Elec. Sales

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Goldney Electronics S.L.

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Sinequanon

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Fibra_Brandt Electronic GMBH

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ComSIT Distribution GmbH

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LittleDiode

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ICP Electronique

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Extreme Components

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Electronic Expediters

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Inland Empire Components Inc.

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PUI

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Corel Iberica Componentes, S.L.

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ACDS - Activité Composants Distribution Service

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Resion

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Whistler Technology

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IDEA Electronic Components Group

UK . 530 parts In-Stock

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$0.055

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MKK Technologies

India . 1,366 parts In-Stock

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$0.104

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DigiPath Technology Company

USA . 1,366 parts In-Stock

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Ampacity Inc.

Singapore . 100 parts In-Stock

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Corphita

USA . 7,700 parts In-Stock

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Corohmni

South Africa . 78 parts In-Stock

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Northwest PG Solutions

USA . 3,975 parts In-Stock

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$0.390

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$0.344

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Native Components

USA . 1,227 parts In-Stock

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$0.410

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$0.394

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QUARKTWIN TECHNOLOGY LTD

USA . 16,048 parts In-Stock

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Problanco Electronics

Mexico . 5,947 parts In-Stock

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Glotronic Ltd.

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UNI Independent Distributors

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SupplyDigital Components

Austria . 1,153 parts In-Stock

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Parana Technologies

USA . 1,141 parts In-Stock

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Kepictronics

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UHIMA Technologies

Türkiye . 800 parts In-Stock

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TANS Electronics

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Kulean Microsystems

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Overview

Experience the superior quality and reliability of Onsemi's BYW29-100 diode rectifier. Designed for a wide range of applications, this product offers exceptional performance and efficiency. With a maximum output current of 7.3A and a maximum repetitive peak reverse voltage of 100V, this rectifier diode delivers consistent results. Trust in Onsemi's reputation for excellence and choose the BYW29-100 for your next project to experience the unparalleled value and benefits it provides.

Feature Benefit Bullets

Maximum Reverse Recovery Time: 0.025 us

The short reverse recovery time ensures quick switching and efficient performance of the diode.

Maximum Operating Temperature: 150 °C

The high operating temperature allows the diode to function reliably in various environments.

Terminal Finish: TIN LEAD

The Tin Lead terminal finish provides good solderability and durability.

Peak Reflow Temperature °C: 235

The high peak reflow temperature ensures proper soldering during assembly processes.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, it efficiently converts alternating current into direct current.

Maximum Forward Voltage (VF): 1.3 V

The low forward voltage drop ensures minimal power loss in the diode.

Maximum Output Current: 7.3 A

The high output current capability allows the diode to handle large loads effectively.

Maximum Repetitive Peak Reverse Voltage: 100 V

The diode can withstand high reverse voltages repeatedly without damage.

Maximum Non Repetitive Peak Forward Current: 100 A

The diode can handle brief high forward currents without failure.

Technical Specifications

Diodes & Rectifiers BYW29-100 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

7.3 A

Peak Reflow Temperature (C):

235

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Recovery Time:

.025 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Trade Compliance

BYW29-100 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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