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BYW29-50A

STMicroelectronics

BYW29-50A by STMicroelectronics

BYW29-50A by STMicroelectronics is a single rectifier diode with a max reverse recovery time of 0.035 us and max output current of 8 A. It is used for efficiency applications, with a max power dissipation of 18 W and operating temperature range from -40 to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,762 parts In-Stock

1+ parts

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3,762

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Vyrian

USA . 3,529 parts In-Stock

1+ parts

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3,529

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Anansix

USA . 715 parts In-Stock

1+ parts

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715

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 530 parts In-Stock

1+ parts

$0.139

100+ parts

-

1k+ parts

$0.125

10k+ parts

-

530

$0.139

-

$0.125

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MKK Technologies

India . 2,238 parts In-Stock

1+ parts

$0.261

100+ parts

-

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2,238

$0.261

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DigiPath Technology Company

USA . 2,238 parts In-Stock

1+ parts

$0.261

100+ parts

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2,238

$0.261

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Native Components

USA . 430 parts In-Stock

1+ parts

$0.327

100+ parts

-

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$0.314

430

$0.327

-

-

$0.314

Northwest PG Solutions

USA . 706 parts In-Stock

1+ parts

$0.360

100+ parts

-

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-

10k+ parts

$0.317

706

$0.360

-

-

$0.317

Corphita

USA . 3,885 parts In-Stock

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3,885

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Parana Technologies

USA . 242 parts In-Stock

1+ parts

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$0.166

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242

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$0.166

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Overview

Upgrade your efficiency with the BYW29-50A diode by STMicroelectronics. Designed for high performance and reliability, this rectifier diode offers a maximum output current of 8A and a maximum reverse voltage of 50V. Whether you're working on power supplies, battery chargers, or inverters, this diode's fast recovery time and low reverse current make it the perfect choice for enhancing your application's performance. Trust in STMicroelectronics' reputation for quality and innovation to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the diode, making it durable and suitable for various applications.

Maximum Reverse Recovery Time: 0.035 us

Fast reverse recovery time ensures efficient switching and reduces power loss in the diode, improving overall performance.

Maximum Reverse Current: 10 uA

Low reverse current minimizes leakage and improves efficiency of the diode.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for easy installation and heat dissipation, making it convenient for applications requiring efficiency.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range allows the diode to be used in a variety of environments without compromising performance.

Maximum Power Dissipation: 18 W

High power dissipation capability allows the diode to handle a significant amount of power, making it suitable for high-power applications.

Maximum Forward Voltage (VF): 1.3 V

Low forward voltage drop helps in reducing power loss and improves efficiency of the diode.

Maximum Output Current: 8 A

High maximum output current rating ensures the diode can handle heavy loads without any issues.

Maximum Repetitive Peak Reverse Voltage: 50 V

High repetitive peak reverse voltage rating provides protection against voltage spikes and ensures durability of the diode.

Diode Element Material: SILICON

Silicon diode element material is commonly used for its reliability, efficiency, and low cost, making it a good choice for various applications.

Technical Specifications

Diodes & Rectifiers BYW29-50A attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

18 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

BYW29-50A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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