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BYW29-200

Onsemi

BYW29-200 by Onsemi

The Onsemi BYW29-200 is a single rectifier diode with a max output current of 8A and forward voltage of 1.3V. It has an ultra-fast recovery power application, operating at a max temperature of 150 °C. The diode features a plastic/epoxy package body material and flange mount style for through-hole terminals.

Median Price

$0.500

Lifecycle Status

Suppliers In-Stock

43

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1k+

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EXC GmbH

Germany . 118 parts In-Stock

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TEDSS.com

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American Microsemiconductor Inc.

USA . 96 parts In-Stock

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One Stop Electronics

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Advanced Electronics

New Zealand . 450 parts In-Stock

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IDEA Electronic Components Group

UK . 1,020 parts In-Stock

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$0.089

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MKK Technologies

India . 1,088 parts In-Stock

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DigiPath Technology Company

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Corohmni

South Africa . 352 parts In-Stock

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Native Components

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Northwest PG Solutions

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Component Stockers USA

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RC Electronics

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Metaverse IC Inc.

Canada . 20,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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UNI Independent Distributors

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SupplyDigital Components

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Latvia . 4,463 parts In-Stock

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Kulean Microsystems

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Glotronic Ltd.

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Infinite Electronics LLP (Excess)

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Israel . 724 parts In-Stock

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UHIMA Technologies

Türkiye . 337 parts In-Stock

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Overview

Discover the power of the BYW29-200 by Onsemi, a top-of-the-line diode perfect for ultra-fast recovery power applications. Manufactured by Onsemi, a trusted name in the industry known for their high-quality components, this single-configured diode offers unmatched performance and reliability. With a maximum output current of 8A and a maximum repetitive peak reverse voltage of 200V, this diode is a game-changer for your projects. Say goodbye to slow recovery times and hello to efficiency with the BYW29-200.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

Single configuration simplifies circuit design and installation, making it easy to use for different projects.

Maximum Reverse Recovery Time: 0.035 us

Ultra-fast reverse recovery time ensures efficient operation and minimizes power loss in high-speed applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and installation in different electronic devices or circuits.

No. of Terminals: 2

Having 2 terminals simplifies connection and integration into existing circuits or systems.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers secure and stable mounting for the diode in various applications.

Application: ULTRA FAST RECOVERY POWER

Designed for ultra-fast recovery power applications, ensuring high efficiency and performance in power electronics.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the diode can withstand harsh environmental conditions and high temperatures.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish provides good conductivity and solderability for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection, making it user-friendly for different projects.

Case Connection: CATHODE

Cathode case connection allows for easy identification and correct orientation during installation.

Maximum Time At Peak Reflow Temperature (s): 30

Short peak reflow time of 30 seconds reduces the risk of thermal damage and ensures proper soldering during assembly.

Peak Reflow Temperature °C: 240

High peak reflow temperature of 240 °C enables reliable and efficient soldering of the diode during assembly.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC voltage, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 1.3 V

Low forward voltage drop of 1.3V minimizes power loss and enhances efficiency in circuit operation.

Maximum Output Current: 8 A

High maximum output current of 8A allows for reliable and stable power delivery in various applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure and reliable connections for the diode in circuit boards or PCBs.

Maximum Repetitive Peak Reverse Voltage: 200 V

High maximum repetitive peak reverse voltage of 200V ensures reliable operation and protection against voltage spikes.

Maximum Non Repetitive Peak Forward Current: 100 A

High maximum non-repetitive peak forward current of 100A allows for reliable operation in high-power applications.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliability in various electronic applications.

Technical Specifications

Diodes & Rectifiers BYW29-200 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

240

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BYW29-200 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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