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BYT12-300R

STMicroelectronics

BYT12-300R by STMicroelectronics

STMicroelectronics BYT12-300R is a single rectifier diode with 0.1 us reverse recovery time and 15 uA reverse current. It operates b/w -40 to 150 °C, with 20 W power dissipation. Ideal for fast recovery applications, it has a max output current of 12 A and can handle up to 300 V peak reverse voltage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,517 parts In-Stock

1+ parts

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2,517

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Digiode

USA . 1,261 parts In-Stock

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1,261

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Vyrian

USA . 108 parts In-Stock

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108

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 951 parts In-Stock

1+ parts

$0.179

100+ parts

-

1k+ parts

$0.161

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951

$0.179

-

$0.161

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MKK Technologies

India . 1,966 parts In-Stock

1+ parts

$0.337

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-

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1,966

$0.337

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DigiPath Technology Company

USA . 1,966 parts In-Stock

1+ parts

$0.337

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1,966

$0.337

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Native Components

USA . 776 parts In-Stock

1+ parts

$0.851

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776

$0.851

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Northwest PG Solutions

USA . 1,200 parts In-Stock

1+ parts

$0.936

100+ parts

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1,200

$0.936

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Corphita

USA . 3,671 parts In-Stock

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3,671

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Parana Technologies

USA . 2,201 parts In-Stock

1+ parts

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$0.214

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2,201

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$0.214

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Overview

Upgrade your electronics with the STMicroelectronics BYT12-300R, a high-quality rectifier diode offering fast recovery and reliable performance. Manufactured by the trusted brand STMicroelectronics, this diode is designed for superior efficiency and durability. Perfect for a wide range of applications, this product ensures smooth operation in various electronic devices. Experience the value and benefits of the BYT12-300R, providing customers with exceptional quality and performance that exceeds expectations.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides excellent thermal conductivity and mechanical strength, making it suitable for high-power applications where heat dissipation is critical.

Maximum Reverse Recovery Time: 0.1 us

Fast reverse recovery time ensures minimal switching losses and improved efficiency in fast recovery applications.

Maximum Reverse Current: 15 uA

Low reverse current ensures minimal leakage current, leading to lower power consumption and improved performance.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the diode to function reliably in various environmental conditions.

Maximum Power Dissipation: 20 W

High power dissipation capability enables the diode to handle large amounts of power without overheating, making it suitable for high-power applications.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting alternating current (AC) to direct current (DC) efficiently, making them ideal for power supply applications.

Maximum Forward Voltage (VF): 1.5 V

Low forward voltage drop reduces power losses and improves efficiency in forward conduction mode.

Maximum Output Current: 12 A

High output current rating allows the diode to handle large current flows, making it suitable for high-current applications.

Maximum Repetitive Peak Reverse Voltage: 300 V

High reverse voltage rating ensures the diode can withstand voltage spikes and reverse bias conditions without failing prematurely.

Diode Element Material: SILICON

Silicon diodes offer reliable performance, high efficiency, and good temperature stability, making them a popular choice for various electronic circuits.

Technical Specifications

Diodes & Rectifiers BYT12-300R attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Case Connection:

ANODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JESD-30 Code:

O-MUPM-D1

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

12 A

Package Body Material:

METAL

Package Shape:

Package Style (Meter):

POST/STUD MOUNT

Maximum Power Dissipation:

20 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Current:

15 uA

Maximum Reverse Recovery Time:

.1 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BYT12-300R Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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