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BYT11-1000

STMicroelectronics

BYT11-1000 by STMicroelectronics

BYT11-1000 by STMicroelectronics is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 1000V. It has a small outline package style, suitable for surface mount applications in various electronic circuits. With a fast reverse recovery time of 0.1us, it operates efficiently in temperatures ranging from -55 °C to 150°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,208 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,900 parts In-Stock

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1,900

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ComSIT USA

USA . 1,900 parts In-Stock

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1,900

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Anansix

USA . 1,150 parts In-Stock

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1,150

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J2 Sourcing AB

Sweden . 700 parts In-Stock

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700

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LIBRA Elektronik GmbH

Germany . 485 parts In-Stock

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485

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Vyrian

USA . 439 parts In-Stock

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439

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GES GmbH

Germany . 286 parts In-Stock

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286

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LittleDiode

UK . 26 parts In-Stock

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Prism Electronics

USA . 1 parts In-Stock

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ECAB

Sweden . 1 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 186 parts In-Stock

1+ parts

$0.034

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$0.031

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186

$0.034

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$0.031

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MKK Technologies

India . 1,018 parts In-Stock

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$0.064

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$0.064

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DigiPath Technology Company

USA . 1,018 parts In-Stock

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$0.064

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$0.064

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Benley Electronics

USA . 2 parts In-Stock

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$2.000

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Parana Technologies

USA . 1,161 parts In-Stock

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$0.041

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Northwest PG Solutions

USA . 973 parts In-Stock

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Native Components

USA . 767 parts In-Stock

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Corphita

USA . 403 parts In-Stock

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403

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Assy Fe

Spain . 161 parts In-Stock

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Perfect Parts

USA . 1 parts In-Stock

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1

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Overview

Experience the unparalleled quality and reliability of STMicroelectronics with the BYT11-1000 diode rectifier. Ideal for a wide range of applications, this single-configured diode offers customers exceptional value and benefits. With a maximum forward voltage of 1V and output current of 1A, this product provides efficient and effective power management solutions. Trust in STMicroelectronics to deliver cutting-edge technology that meets your needs with precision and performance.

Feature Benefit Bullets

Package Body Material: GLASS

Glass material provides durability and protection, making the product suitable for various environments and applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, enhancing the product's usability in modern electronic designs.

Maximum Reverse Recovery Time: 0.1 us

The fast reverse recovery time ensures efficient operation and minimal power loss, making the product ideal for high-speed applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, the product can withstand demanding thermal conditions, increasing its reliability and longevity.

Diode Type: RECTIFIER DIODE

Rectifier diodes are designed for converting AC to DC, making this product essential for power supply applications where efficient rectification is required.

Maximum Output Current: 1 A

The high output current rating allows the diode to handle substantial amounts of current, making it suitable for power electronics and circuit protection.

Technical Specifications

Diodes & Rectifiers BYT11-1000 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

SNUBBER DIODE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

1.25 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Recovery Time:

.1 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

BYT11-1000 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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