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BYT11-800

STMicroelectronics

BYT11-800 by STMicroelectronics

STMicroelectronics BYT11-800 is a single rectifier diode with 800V peak reverse voltage, 1A output current, and 0.1us reverse recovery time. It operates b/w -55 to 150 °C and dissipates up to 1.25W power. Ideal for applications requiring high voltage rectification in round package shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,285 parts In-Stock

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ECAB

Sweden . 1,396 parts In-Stock

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Anansix

USA . 685 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 585 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 305 parts In-Stock

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Vyrian

USA . 182 parts In-Stock

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LittleDiode

UK . 6 parts In-Stock

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IDEA Electronic Components Group

UK . 2,074 parts In-Stock

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$0.181

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$0.163

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2,074

$0.181

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$0.163

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MKK Technologies

India . 871 parts In-Stock

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$0.341

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871

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DigiPath Technology Company

USA . 871 parts In-Stock

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$0.341

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871

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Corphita

USA . 2,363 parts In-Stock

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Parana Technologies

USA . 1,981 parts In-Stock

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$0.217

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Northwest PG Solutions

USA . 1,228 parts In-Stock

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Assy Fe

Spain . 585 parts In-Stock

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Native Components

USA . 515 parts In-Stock

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Overview

Experience superior quality and reliability with the STMicroelectronics BYT11-800 diode rectifier. As a trusted manufacturer in the industry, STMicroelectronics delivers top-notch performance and durability in their products. Ideal for a wide range of applications, this diode offers customers unparalleled value and benefits. Whether you're looking for efficient power conversion or reliable voltage regulation, the BYT11-800 is the perfect solution for all your needs. Trust STMicroelectronics to provide you with the best in diodes and rectifiers.

Feature Benefit Bullets

Config: SINGLE

SINGLE configuration simplifies the circuit design and installation process.

Maximum Reverse Recovery Time: 0.1 us

Fast reverse recovery time ensures efficient and rapid switching of the diode.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in various applications.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces chances of errors.

Package Style (Meter): LONG FORM

Long form package style provides better heat dissipation and reduces thermal stress on the diode.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the diode to function reliably in a wide range of environments.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures the diode can operate effectively in colder conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish provides good solderability and enhances the durability of the connections.

Terminal Position: AXIAL

Axial terminal position simplifies the mounting process and allows for easy soldering.

Case Connection: ISOLATED

Isolated case connection ensures electrical safety and prevents unwanted short-circuits.

Maximum Power Dissipation: 1.25 W

High power dissipation capability ensures the diode can handle heavy loads without overheating.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC current with low voltage drop.

Maximum Forward Voltage (VF): 1 V

Low forward voltage drop ensures energy efficiency and minimal power loss in the circuit.

Maximum Output Current: 1 A

High output current rating allows the diode to handle large current flows without damage.

Terminal Form: WIRE

Wire terminal form provides secure connections and ease of installation in various circuits.

Maximum Repetitive Peak Reverse Voltage: 800 V

High reverse voltage rating makes the diode suitable for applications requiring high voltage rectification.

Diode Element Material: SILICON

Silicon material ensures high performance, reliability, and stability of the diode.

Technical Specifications

Diodes & Rectifiers BYT11-800 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

SNUBBER DIODE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

O-XALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

1.25 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

800 V

Maximum Reverse Recovery Time:

.1 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Trade Compliance

BYT11-800 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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