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BYT11-800RL

STMicroelectronics

BYT11-800RL by STMicroelectronics

BYT11-800RL by STMicroelectronics is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 800V. With a fast reverse recovery time of 0.1us, it is suitable for applications requiring high power dissipation up to 1.25W in temperatures ranging from -55 °C to 150°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,325 parts In-Stock

1+ parts

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3,325

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Anansix

USA . 2,634 parts In-Stock

1+ parts

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2,634

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Vyrian

USA . 160 parts In-Stock

1+ parts

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160

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 862 parts In-Stock

1+ parts

$0.078

100+ parts

-

1k+ parts

$0.070

10k+ parts

-

862

$0.078

-

$0.070

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MKK Technologies

India . 504 parts In-Stock

1+ parts

$0.147

100+ parts

-

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-

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504

$0.147

-

-

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DigiPath Technology Company

USA . 504 parts In-Stock

1+ parts

$0.147

100+ parts

-

1k+ parts

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504

$0.147

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-

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Corphita

USA . 4,203 parts In-Stock

1+ parts

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4,203

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Native Components

USA . 861 parts In-Stock

1+ parts

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861

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Parana Technologies

USA . 464 parts In-Stock

1+ parts

-

100+ parts

$0.094

1k+ parts

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464

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$0.094

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Northwest PG Solutions

USA . 452 parts In-Stock

1+ parts

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452

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Overview

Discover the unbeatable quality and reliability of the BYT11-800RL by STMicroelectronics, a leading manufacturer in the industry. This RECTIFIER DIODE offers fast response times and efficient power management, making it ideal for a wide range of applications. From automotive electronics to industrial equipment, this diode ensures optimal performance and durability under extreme conditions. Trust STMicroelectronics to deliver cutting-edge technology that exceeds expectations and drives innovation in every project. Unlock the potential of your designs with the BYT11-800RL.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and protection for the diode, making it suitable for a variety of applications.

Config: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in different electronic setups.

Maximum Reverse Recovery Time: 0.1 us

Fast reverse recovery time ensures efficient operation and performance of the diode in high-speed applications.

Package Shape: ROUND

Round package shape provides easy mounting and helps in efficient heat dissipation, enhancing overall performance.

No. of Terminals: 2

Simple 2-terminal design makes it easy to connect in circuits without complexity.

Package Style (Meter): LONG FORM

Long form package style provides a secure and stable mounting option for the diode in various electronic devices.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range allows the diode to withstand elevated temperatures and ensures reliability in harsh conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature range enables the diode to function efficiently in cold environments without compromising performance.

Terminal Position: AXIAL

Axial terminal position makes it convenient for easy PCB mounting and integration, saving space and simplifying installation.

Case Connection: ISOLATED

Isolated case connection enhances safety and reduces the risk of short circuits, ensuring stable operation of the diode.

Maximum Power Dissipation: 1.25 W

High power dissipation capability allows the diode to handle significant power loads without overheating or deteriorating performance.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC currents efficiently, making it ideal for rectification applications.

Maximum Output Current: 1 A

High maximum output current rating ensures that the diode can handle substantial current flow without damage, making it reliable for various applications.

Terminal Form: WIRE

Wire terminal form provides a reliable connection for easy installation and maintenance of the diode in electronic circuits.

Maximum Repetitive Peak Reverse Voltage: 800 V

High maximum peak reverse voltage rating allows the diode to withstand reverse voltage spikes without breakdown, ensuring long-term reliability.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and low forward voltage drop, making the diode highly efficient in various electrical applications.

Technical Specifications

Diodes & Rectifiers BYT11-800RL attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

SNUBBER DIODE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

O-PALF-W2

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

1.25 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

800 V

Maximum Reverse Recovery Time:

.1 us

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BYT11-800RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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