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BAT30FILM

STMicroelectronics

BAT30FILM by STMicroelectronics

BAT30FILM by STMicroelectronics is a Schottky rectifier diode designed for surface mount applications. It features a max operating temp of 150 °C, a forward voltage of 0.24V, and supports up to 0.3A output current. Ideal for efficient power management in compact devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,998 parts In-Stock

1+ parts

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4,998

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Vyrian

USA . 2,441 parts In-Stock

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2,441

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Anansix

USA . 1,181 parts In-Stock

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1,181

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 144 parts In-Stock

1+ parts

$0.162

100+ parts

-

1k+ parts

$0.146

10k+ parts

-

144

$0.162

-

$0.146

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MKK Technologies

India . 503 parts In-Stock

1+ parts

$0.304

100+ parts

-

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503

$0.304

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DigiPath Technology Company

USA . 503 parts In-Stock

1+ parts

$0.304

100+ parts

-

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503

$0.304

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-

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AZTECH Wire

Italy . 463 parts In-Stock

1+ parts

$16.180

100+ parts

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463

$16.180

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Corphita

USA . 3,042 parts In-Stock

1+ parts

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3,042

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Northwest PG Solutions

USA . 1,641 parts In-Stock

1+ parts

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1,641

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Parana Technologies

USA . 1,601 parts In-Stock

1+ parts

-

100+ parts

$0.194

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1,601

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$0.194

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Native Components

USA . 487 parts In-Stock

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487

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Overview

Unlock the potential of your projects with the BAT30FILM by STMicroelectronics—a top-tier Schottky rectifier diode designed for efficiency and reliability. Built with precision in a compact plastic/epoxy package, it ensures optimal performance in various applications, from power management to signal processing. Elevate your designs with a trusted manufacturer renowned for innovation, all while enjoying enhanced energy savings and superior thermal performance. Choose BAT30FILM for a seamless blend of quality and value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides excellent thermal and electrical insulation, ensuring reliability and durability in various applications.

Config: SINGLE

A single configuration simplifies circuit design and integration, making it easier to manage and implement.

Surface Mount: YES

Surface mount technology allows for high-density placement on PCBs, optimizing space and facilitating automated assembly.

Package Shape: RECTANGULAR

The rectangular shape helps in compact layouts, aligning well with other components on the PCB for efficient design.

No. of Terminals: 3

Three terminals allow for straightforward connections, enhancing versatility in circuit design.

Package Style (Meter): SMALL OUTLINE

The small outline package minimizes footprint and weight, making it perfect for compact electronic devices.

Maximum Operating Temperature: 150 °C

A high operating temperature ensures that the diode maintains performance in demanding environments.

Terminal Position: DUAL

Dual terminal positioning supports better alignment in electronic layouts, facilitating efficient electrical connections.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it a critical component in power supply circuits.

Maximum Forward Voltage (VF): 0.24 V

A low forward voltage drop maximizes efficiency by minimizing power loss during operation.

Maximum Output Current: 0.3 A

Sufficient output current rating makes it suitable for a variety of low to medium power applications.

Technology: SCHOTTKY

Schottky technology allows for faster switching speeds and lower forward voltage, improving overall performance.

Terminal Form: GULL WING

Gull wing terminals enhance soldering reliability and strength, ensuring a durable connection on the PCB.

Maximum Repetitive Peak Reverse Voltage: 30 V

A robust peak reverse voltage rating makes this diode resilient to voltage spikes, enhancing circuit protection.

Maximum Non Repetitive Peak Forward Current: 1 A

The ability to handle high non-repetitive peak forward current provides additional flexibility in transient applications.

Diode Element Material: SILICON

Silicon as the diode element material ensures good temperature stability and performance consistency across various conditions.

Technical Specifications

Diodes & Rectifiers BAT30FILM attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.24 V

JESD-30 Code:

R-PDSO-G3

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

BAT30FILM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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