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BAT30-09P6FILM

STMicroelectronics

BAT30-09P6FILM by STMicroelectronics

BAT30-09P6FILM by STMicroelectronics is a Schottky rectifier diode ideal for compact applications. It features a max reverse voltage of 30V, low forward voltage drop of 0.24V, and operates from -65 °C to 150 °C. Perfect for efficient power management in electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,237 parts In-Stock

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4,237

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Digiode

USA . 3,571 parts In-Stock

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3,571

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Anansix

USA . 2,840 parts In-Stock

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2,840

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 817 parts In-Stock

1+ parts

$0.182

100+ parts

-

1k+ parts

$0.164

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-

817

$0.182

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$0.164

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MKK Technologies

India . 1,554 parts In-Stock

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$0.343

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1,554

$0.343

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DigiPath Technology Company

USA . 1,554 parts In-Stock

1+ parts

$0.343

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1,554

$0.343

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AZTECH Wire

Italy . 821 parts In-Stock

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$10.270

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821

$10.270

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Corphita

USA . 4,160 parts In-Stock

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4,160

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Parana Technologies

USA . 2,360 parts In-Stock

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$0.218

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2,360

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$0.218

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Northwest PG Solutions

USA . 1,289 parts In-Stock

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Native Components

USA . 950 parts In-Stock

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950

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Perfect Parts

USA . 85 parts In-Stock

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85

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Overview

Unlock superior performance with the BAT30-09P6FILM from STMicroelectronics—your go-to choice for reliable and efficient rectification. Crafted with top-tier materials, this Schottky diode ensures minimal forward voltage drop and excellent thermal stability, making it perfect for high-frequency applications in consumer electronics, automotive systems, and industrial automation. Enjoy peace of mind knowing you’re backed by STMicroelectronics' reputation for innovation and quality, enhancing your designs with unmatched durability and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making the diode reliable for long-term performance.

Config: SEPARATE, 2 ELEMENTS

The separate configuration of the two elements allows for greater flexibility in circuit design and improved thermal management.

Surface Mount: YES

Being surface mount technology (SMT) compatible makes the diode suitable for modern compact circuit designs, enabling easier assembly and saving space on PCBs.

Maximum Reverse Current: 50 uA

A low maximum reverse current of 50 uA minimizes power loss and improves overall efficiency in applications, making it suitable for power-sensitive designs.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space and can be easily integrated into various PCB layouts.

Reverse Test Voltage: 10 V

A reverse test voltage of 10 V indicates robustness in reverse bias conditions, ensuring reliable operation in demanding applications.

No. of Terminals: 6

The presence of 6 terminals provides multiple connection options, facilitating better circuit integration and flexibility in design.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to a smaller footprint, which is ideal for high-density circuit boards.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this diode can perform well in high-temperature environments, making it reliable for automotive and industrial applications.

Minimum Operating Temperature: -65 °C

A minimum operating temperature of -65 °C allows for applications in extreme conditions, providing versatility in harsh environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers good solderability and corrosion resistance, ensuring reliable electrical connections.

Terminal Position: DUAL

Dual terminal positioning facilitates easy connection and a more organized layout on circuit boards.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC and handles high-speed switching, making it ideal for power management applications.

Maximum Forward Voltage (VF): 0.24 V

A low maximum forward voltage drop of 0.24 V enhances energy efficiency and reduces heat generation in applications.

Maximum Output Current: 0.3 A

The capability to handle a maximum output current of 0.3 A makes this diode suitable for a range of medium-power applications.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop, making it ideal for high-frequency applications and enhanced efficiency.

Terminal Form: FLAT

Flat terminals ensure better contact surfaces for soldering and provide a stable mount during assembly.

No. of Elements: 2

Having 2 elements in the package increases functionality and allows for more compact circuitry without sacrificing performance.

Maximum Repetitive Peak Reverse Voltage: 30 V

A maximum repetitive peak reverse voltage of 30 V indicates excellent performance under high voltage conditions, ensuring reliability in various applications.

Diode Element Material: SILICON

Silicon as the diode element material ensures high-performance characteristics, including good thermal stability and efficient operation.

Technical Specifications

Diodes & Rectifiers BAT30-09P6FILM attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.24 V

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

50 uA

Reverse Test Voltage:

10 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAT30-09P6FILM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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