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BAT30AFILM

STMicroelectronics

BAT30AFILM by STMicroelectronics

BAT30AFILM by STMicroelectronics is a Schottky rectifier diode with a max forward voltage of 0.24 V and supports up to 0.3 A output current. It features a compact, dual-terminal design in a small outline package, ideal for surface mount applications. With a peak reverse voltage of 30 V, it’s perfect for efficient power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,192 parts In-Stock

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5,192

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Anansix

USA . 2,784 parts In-Stock

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2,784

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Digiode

USA . 2,076 parts In-Stock

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2,076

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Bristol Electronics

USA . 806 parts In-Stock

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806

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Atlantic Semiconductor

USA . 806 parts In-Stock

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806

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Prism Electronics

USA . 80 parts In-Stock

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80

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,116 parts In-Stock

1+ parts

$0.085

100+ parts

-

1k+ parts

$0.076

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2,116

$0.085

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$0.076

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Native Components

USA . 362 parts In-Stock

1+ parts

$0.097

100+ parts

-

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$0.093

362

$0.097

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$0.093

Northwest PG Solutions

USA . 1,371 parts In-Stock

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$0.106

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$0.094

1,371

$0.106

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$0.094

MKK Technologies

India . 71 parts In-Stock

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$0.159

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71

$0.159

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DigiPath Technology Company

USA . 71 parts In-Stock

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$0.159

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71

$0.159

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AZTECH Wire

Italy . 253 parts In-Stock

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$18.730

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253

$18.730

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Kepictronics

USA . 99,000 parts In-Stock

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Corphita

USA . 3,952 parts In-Stock

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RC Electronics

USA . 2,700 parts In-Stock

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2,700

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Parana Technologies

USA . 1,624 parts In-Stock

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$0.101

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1,624

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$0.101

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Perfect Parts

USA . 90 parts In-Stock

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90

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Overview

Elevate your projects with the BAT30AFILM from STMicroelectronics—a premium Schottky rectifier diode designed for superior performance and reliability. With its compact, surface-mount design, this dual-element diode not only ensures efficient energy conversion but also thrives in high-temperature environments. Experience reduced power loss and faster switching, making it ideal for applications in automotive, industrial, and consumer electronics. Trust in STMicroelectronics' commitment to quality and innovation, empowering you to achieve exceptional results with every use.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making this diode suitable for long-term applications.

Config: COMMON ANODE, 2 ELEMENTS

With a common anode configuration, this diode is versatile for various circuit designs, simplifying integration into existing systems.

Surface Mount: YES

The surface mount design allows for compact assembly on PCBs, saving space and improving efficiency in electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape is effective for efficient thermal management and provides a robust mounting option.

No. of Terminals: 3

Having three terminals facilitates easier connections in circuit designs, promoting flexibility for various applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style helps in optimizing board space and is ideal for compact electronic devices.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can function reliably in demanding thermal environments.

Terminal Position: DUAL

The dual terminal position allows for easy integration into circuit boards, enhancing layout flexibility.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is specifically designed for efficient conversion of AC to DC, making it essential for power supplies.

Maximum Forward Voltage (VF): 0.24 V

A low forward voltage drop enhances efficiency by reducing power loss during operation, contributing to better overall performance.

Maximum Output Current: 0.3 A

The ability to handle a maximum output current of 0.3 A ensures it can effectively meet the demands of various electronic applications.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low forward voltage, making this diode ideal for high-frequency applications.

Terminal Form: GULL WING

The gull wing terminal form offers excellent solderability and stability on PCB, ensuring secure connections.

No. of Elements: 2

Two elements enable the diode to handle dual-device applications, increasing versatility in circuit design.

Maximum Repetitive Peak Reverse Voltage: 30 V

A maximum repetitive peak reverse voltage of 30 V provides robust performance in various circuits under demanding conditions.

Maximum Non Repetitive Peak Forward Current: 1 A

Handling a maximum non-repetitive peak forward current of 1 A ensures reliability and resilience in transient conditions.

Diode Element Material: SILICON

Silicon as the diode element material guarantees widespread compatibility and durability across a range of applications.

Technical Specifications

Diodes & Rectifiers BAT30AFILM attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.24 V

JESD-30 Code:

R-PDSO-G3

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

BAT30AFILM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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