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BAT30AWFILM

STMicroelectronics

BAT30AWFILM by STMicroelectronics

BAT30AWFILM by STMicroelectronics is a Schottky rectifier diode with a max forward voltage of 0.24 V and supports up to 0.3 A output current. It features a compact surface mount design in a rectangular package, ideal for space-constrained applications. With a peak reverse voltage of 30 V, it ensures reliable performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Zilex Electronics Inc.

Canada . 9,000 parts In-Stock

1+ parts

-

100+ parts

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9,000

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-

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Vyrian

USA . 6,337 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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10k+ parts

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6,337

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Digiode

USA . 2,864 parts In-Stock

1+ parts

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2,864

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Anansix

USA . 2,776 parts In-Stock

1+ parts

-

100+ parts

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2,776

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 844 parts In-Stock

1+ parts

$0.097

100+ parts

-

1k+ parts

-

10k+ parts

$0.093

844

$0.097

-

-

$0.093

Northwest PG Solutions

USA . 759 parts In-Stock

1+ parts

$0.106

100+ parts

-

1k+ parts

-

10k+ parts

$0.094

759

$0.106

-

-

$0.094

IDEA Electronic Components Group

UK . 946 parts In-Stock

1+ parts

$0.152

100+ parts

-

1k+ parts

$0.137

10k+ parts

-

946

$0.152

-

$0.137

-

MKK Technologies

India . 636 parts In-Stock

1+ parts

$0.285

100+ parts

-

1k+ parts

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10k+ parts

-

636

$0.285

-

-

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DigiPath Technology Company

USA . 636 parts In-Stock

1+ parts

$0.285

100+ parts

-

1k+ parts

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636

$0.285

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AZTECH Wire

Italy . 589 parts In-Stock

1+ parts

$16.520

100+ parts

-

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589

$16.520

-

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Component Stockers USA

USA . 741 parts In-Stock

1+ parts

$99.990

100+ parts

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741

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 4,326 parts In-Stock

1+ parts

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4,326

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

1+ parts

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1,800

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Parana Technologies

USA . 1,533 parts In-Stock

1+ parts

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100+ parts

$0.182

1k+ parts

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10k+ parts

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1,533

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$0.182

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Alle Elektronik GmbH

Germany . 1,200 parts In-Stock

1+ parts

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1,200

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Assy Fe

Spain . 1,000 parts In-Stock

1+ parts

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1,000

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Corphita

USA . 663 parts In-Stock

1+ parts

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663

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Overview

Unlock unparalleled performance with the BAT30AWFILM from STMicroelectronics, a leading innovator in semiconductor solutions. This high-quality rectifier diode is designed for efficiency, featuring robust thermal management and a compact package that fits seamlessly into various applications. Experience enhanced reliability and reduced power loss, making it your ideal choice for consumer electronics, automotive systems, and beyond. Elevate your projects with ST’s trusted expertise!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protects the diode from environmental factors, enhancing its longevity.

Config: COMMON ANODE, 2 ELEMENTS

This configuration allows for easier circuit integration, making it versatile for various applications.

Surface Mount: YES

Surface mount capability allows for efficient space utilization on PCBs, facilitating compact designs.

Package Shape: RECTANGULAR

The rectangular package shape contributes to efficient space management in circuit layouts.

No. of Terminals: 3

Having three terminals provides flexibility in circuit design and simplifies connections.

Package Style (Meter): SMALL OUTLINE

The small outline package style supports high-density mounting on PCBs, ideal for modern electronic devices.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can perform reliably in demanding environments.

Terminal Finish: MATTE TIN

Matte tin terminal finish enhances solderability, ensuring strong electrical connections during assembly.

Terminal Position: DUAL

Dual terminal positioning allows for symmetrical mounting, reducing mechanical stress and improving reliability.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is crucial for converting AC to DC, making it essential in power supply applications.

Maximum Forward Voltage (VF): 0.24 V

A low maximum forward voltage drop reduces energy loss during operation, increasing overall efficiency.

Maximum Output Current: 0.3 A

The capability to handle 0.3 A makes this diode suitable for various low to medium current applications.

Technology: SCHOTTKY

Schottky technology allows for faster switching times and lower voltage drops compared to standard diodes.

Terminal Form: GULL WING

Gull wing leads enhance mechanical strength and reliability, making the component more robust during assembly.

No. of Elements: 2

Having two elements enables improved performance in specific circuit configurations, such as full-wave rectification.

Maximum Repetitive Peak Reverse Voltage: 30 V

A maximum reverse voltage of 30 V ensures reliable performance in various applications without breakdown.

Maximum Non Repetitive Peak Forward Current: 1 A

The capability to handle 1 A for non-repetitive pulses provides robustness during transient conditions.

Diode Element Material: SILICON

Silicon is a widely used semiconductor material, offering stable performance and reliability in electronic devices.

Technical Specifications

Diodes & Rectifiers BAT30AWFILM attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.24 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAT30AWFILM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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