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BAT30-07P6FILM

STMicroelectronics

BAT30-07P6FILM by STMicroelectronics

BAT30-07P6FILM by STMicroelectronics is a Schottky rectifier diode ideal for compact applications. It features a max reverse voltage of 30 V, low forward voltage drop of 0.24 V, and operates b/w -65 °C to 150 °C. Perfect for efficient power management in electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,634 parts In-Stock

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6,634

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Digiode

USA . 4,012 parts In-Stock

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4,012

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Anansix

USA . 1,851 parts In-Stock

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1,851

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,241 parts In-Stock

1+ parts

$0.176

100+ parts

-

1k+ parts

$0.158

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1,241

$0.176

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$0.158

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MKK Technologies

India . 118 parts In-Stock

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$0.330

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118

$0.330

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DigiPath Technology Company

USA . 118 parts In-Stock

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$0.330

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118

$0.330

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AZTECH Wire

Italy . 1,085 parts In-Stock

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$13.590

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1,085

$13.590

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Component Stockers USA

USA . 390 parts In-Stock

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$99.990

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390

$99.990

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Corphita

USA . 4,724 parts In-Stock

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Northwest PG Solutions

USA . 2,285 parts In-Stock

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2,285

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Parana Technologies

USA . 2,158 parts In-Stock

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$0.210

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2,158

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$0.210

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Native Components

USA . 532 parts In-Stock

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Overview

Unlock unparalleled efficiency with the BAT30-07P6FILM from STMicroelectronics—a top-tier rectifier diode designed for precision and reliability. Its compact surface mount design ensures seamless integration into various applications, while the robust materials guarantee optimal performance in extreme conditions. Trust STMicroelectronics' legacy of innovation to deliver exceptional quality that enhances your projects, offering lasting value and unmatched advantages for your electronic designs!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures a robust and reliable package that can withstand various environmental conditions.

Config: SEPARATE, 2 ELEMENTS

The separate configuration with two elements allows for enhanced flexibility in circuit design and efficiency in performance.

Surface Mount: YES

Being surface mount facilitates easier assembly on PCBs, making it ideal for high-density applications and reducing manufacturing costs.

Maximum Reverse Current: 50 uA

A low maximum reverse current ensures minimal power loss and better energy efficiency in circuits, making this diode a great choice for sensitive applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space on the circuit board while maintaining good heat dissipation properties.

Reverse Test Voltage: 10 V

A reverse test voltage of 10V indicates the diode's ability to withstand reverse bias conditions, ensuring reliable operation in a variety of applications.

No. of Terminals: 6

Having six terminals makes this diode versatile for various circuit connections, enhancing design flexibility.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for compact electronic devices, ensuring that size constraints are met without compromising on performance.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature rating allows this diode to function effectively in demanding thermal environments.

Minimum Operating Temperature: -65 °C

The capability to operate at very low temperatures makes this diode suitable for use in extreme conditions, such as aerospace or automotive applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and resistance to corrosion, ensuring longevity and reliability in connections.

Terminal Position: DUAL

Dual terminal positioning allows for easier routing on printed circuit boards, enhancing layout flexibility.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this component is optimal for converting AC voltage to DC, making it essential in power supply applications.

Maximum Forward Voltage (VF): 0.24 V

A low forward voltage of 0.24 V results in minimal power loss during operation, enhancing the overall efficiency of the circuit.

Maximum Output Current: 0.3 A

With a maximum output current of 0.3 A, this diode is capable of handling a decent load while maintaining performance.

Technology: SCHOTTKY

Utilizing Schottky technology provides fast switching speeds and low forward voltage drop, making this diode ideal for high-frequency applications.

Terminal Form: FLAT

Flat terminal form enhances contact area and facilitates a solid connection, ensuring effective conduction and reliability.

No. of Elements: 2

Two diode elements provide dual functionality, making the product versatile for different circuit requirements without needing multiple discrete components.

Maximum Repetitive Peak Reverse Voltage: 30 V

A high maximum repetitive peak reverse voltage indicates excellent protection against voltage spikes, safeguarding circuit integrity.

Diode Element Material: SILICON

Silicon diode elements ensure good thermal performance and reliability, making them a standard choice for a wide range of electronic applications.

Technical Specifications

Diodes & Rectifiers BAT30-07P6FILM attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.24 V

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

50 uA

Reverse Test Voltage:

10 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAT30-07P6FILM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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