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74AC299M

STMicroelectronics

74AC299M by STMicroelectronics

74AC299M by STMicroelectronics is an 8-bit digital shift register with a propagation delay of 22ns. It operates at a nominal voltage of 3.3V and supports both positive edge trigger type and bidirectional count direction. This CMOS technology device is ideal for military-grade applications requiring high-speed data shifting capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,776 parts In-Stock

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Digiode

USA . 2,041 parts In-Stock

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Anansix

USA . 1,882 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 684 parts In-Stock

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$19.832

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$17.849

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684

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MKK Technologies

India . 1,595 parts In-Stock

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$37.294

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$37.294

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DigiPath Technology Company

USA . 1,595 parts In-Stock

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$37.294

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$37.294

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Corphita

USA . 4,646 parts In-Stock

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Parana Technologies

USA . 1,613 parts In-Stock

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$23.713

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$23.713

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Northwest PG Solutions

USA . 827 parts In-Stock

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Native Components

USA . 98 parts In-Stock

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Overview

Unlock the power of digital shift registers with the 74AC299M by STMicroelectronics. Crafted with precision and expertise, this high-quality component offers a seamless integration into various applications, providing customers with unparalleled value and efficiency. With its advanced technology and reliable performance, the 74AC299M ensures optimal functionality and ease of use. Upgrade your projects with this versatile solution and experience the benefits of superior quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices or applications where weight is a concern.

No. of Bits: 8

Having 8 bits allows for a wide range of data processing capabilities, making it suitable for various applications requiring moderate data handling.

Propagation Delay (tpd): 22 ns

With a low propagation delay of 22 ns, the shift register can quickly process and transmit data, making it ideal for high-speed applications.

Maximum Operating Temperature: 125 °C

The shift register can operate in high-temperature environments up to 125 °C, ensuring reliability in harsh conditions.

Trigger Type: POSITIVE EDGE

Having a positive edge trigger allows for precise control over when data is transferred, reducing the chances of errors and improving overall performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the shift register energy-efficient and reliable in noisy environments.

Technical Specifications

Digital Shift Registers 74AC299M attributes and parameters. Explore more Digital Shift Registers devices from STMicroelectronics

Specs

Count Direction:

BIDIRECTIONAL

Family:

AC

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e4

Length:

12.8 mm

Logic IC Type:

Maximum Frequency At Nominal Supply:

45000000 Hz

No. of Bits:

8

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP20,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

3.3/5

Propagation Delay (tpd):

22 ns

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Sub-Category:

Shift Registers

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trigger Type:

POSITIVE EDGE

Width:

7.5 mm

Minimum fmax:

80 MHz

Trade Compliance

74AC299M Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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