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1N4109

STMicroelectronics

1N4109 by STMicroelectronics

1N4109 by STMicroelectronics is a Zener diode with 15V nominal voltage, 0.25W power dissipation, and 200 ohm dynamic impedance. It is used for voltage regulation in electronic circuits, offering a max reverse current of 0.05uA and operating temperature range from -65 to 200 °C.

Median Price

$2.310

Lifecycle Status

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25

In-Stock Inventory

1k+

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Arrow

USA . 15 parts In-Stock

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$1.927

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Microchip Technology

USA . 398 parts In-Stock

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Mouser Electronics

USA . 225 parts In-Stock

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DigiKey

USA . 156 parts In-Stock

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Verical

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Digiode

USA . 4,828 parts In-Stock

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Vyrian

USA . 1,646 parts In-Stock

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NAC Semi

USA . 318 parts In-Stock

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$2.290

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$2.120

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American Microsemiconductor Inc.

USA . 161 parts In-Stock

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$19.980

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Sensible Micro Corp

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PC Components Company LLC

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Component Sense

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Anansix

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Bristol Electronics

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NexGen Digital

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Electronic Expediters

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Mil-Aero Solutions, Inc.

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R&J Components

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Electronics Depot

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ES Components

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Prism Electronics

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Lakeview Electronics

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ECAB

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Microfarads

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Resion

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IDEA Electronic Components Group

UK . 55 parts In-Stock

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$0.135

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MKK Technologies

India . 1,545 parts In-Stock

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$0.282

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DigiPath Technology Company

USA . 1,545 parts In-Stock

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Native Components

USA . 210 parts In-Stock

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$1.212

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Northwest PG Solutions

USA . 1,336 parts In-Stock

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Corphita

USA . 2,945 parts In-Stock

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Microchip USA

USA . 4,644 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 19,609 parts In-Stock

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Fulton Briggs Corp.

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Perfect Parts

USA . 2,623 parts In-Stock

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Supply Digital

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Parana Technologies

USA . 1,375 parts In-Stock

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RTC Component Inc.

USA . 18 parts In-Stock

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Overview

Unlock the power of precision with the STMicroelectronics 1N4109 Zener Diode. Crafted with top-notch quality and expertise, this diode offers unmatched reliability and performance. Ideal for a wide range of applications, this diode provides stable voltage regulation and protection against voltage spikes. With its impressive specifications and exceptional value, the 1N4109 is the perfect choice for your electronics projects. Experience the difference with STMicroelectronics today!

Feature Benefit Bullets

Package Body Material: GLASS

Glass material provides high thermal conductivity and good resistance to temperature variations, making the zener diode package durable and reliable.

Working Test Current: 0.25 mA

With a low working test current, this zener diode consumes less power and is suitable for low-power applications.

Maximum Reverse Current: 0.05 uA

The low maximum reverse current ensures minimal leakage and improves the overall efficiency of the circuit where the zener diode is used.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature allows the zener diode to function reliably in a wide range of temperature environments, making it versatile and durable.

Nominal Reference Voltage: 15 V

The nominal reference voltage of 15 V makes this zener diode suitable for voltage regulation applications within a specific range, providing stable and accurate voltage output.

Technology: ZENER

Being a zener diode, it is specifically designed for voltage regulation and stabilization, making it a reliable choice for applications requiring precise voltage control.

Technical Specifications

Zener Diodes 1N4109 attributes and parameters. Explore more Zener Diodes devices from STMicroelectronics

Specs

Additional Features:

LOW NOISE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

200 ohm

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Nominal Reference Voltage:

15 V

Maximum Reverse Current:

.05 uA

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

.25 mA

Trade Compliance

1N4109 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-00-945-9582, 5961009459582, 5961-99-118-1374, 5961991181374

NIIN

009459582, 991181374

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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