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1N4104

STMicroelectronics

1N4104 by STMicroelectronics

1N4104 by STMicroelectronics is a Zener diode with 10V nominal reference voltage, 0.25W max power dissipation, and 200 ohm max dynamic impedance. It is used in applications requiring precise voltage regulation like power supplies and voltage references.

Median Price

$2.310

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 432 parts In-Stock

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$2.276

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$2.108

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Microchip Technology

USA . 481 parts In-Stock

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DigiKey

USA . 373 parts In-Stock

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Mouser Electronics

USA . 359 parts In-Stock

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Verical

USA . 432 parts In-Stock

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Freelance Electronics

USA . 4 parts In-Stock

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American Microsemiconductor Inc.

USA . 85 parts In-Stock

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Vyrian

USA . 28,100 parts In-Stock

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Digiode

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NAC Semi

USA . 385 parts In-Stock

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$2.540

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$2.290

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$2.060

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ES Components

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North Shore Components

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Anansix

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Corel Iberica Componentes, S.L.

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ECAB

Sweden . 200 parts In-Stock

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LittleDiode

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Prism Electronics

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PC Components Company LLC

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Electronics Depot

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Bristol Electronics

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Electronic Expediters

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Mil-Aero Solutions, Inc.

USA . 9 parts In-Stock

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DF Sales Co.

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DF Sales Co.

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Van Brakel Electronic

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1

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Distributors (Availability)

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Advanced Electronics

New Zealand . 50 parts In-Stock

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$0.037

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$0.034

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$0.030

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50

$0.037

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Corohmni

South Africa . 74 parts In-Stock

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$0.162

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IDEA Electronic Components Group

UK . 952 parts In-Stock

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$0.165

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$0.148

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952

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MKK Technologies

India . 193 parts In-Stock

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$0.310

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DigiPath Technology Company

USA . 193 parts In-Stock

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Corphita

USA . 1,622 parts In-Stock

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$2.071

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Component Stockers USA

USA . 464 parts In-Stock

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$2.230

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$2.070

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Native Components

USA . 412 parts In-Stock

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$416.291

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$407.965

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$403.802

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$399.639

412

$416.291

$407.965

$403.802

$399.639

Northwest PG Solutions

USA . 892 parts In-Stock

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$457.920

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$457.920

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QUARKTWIN TECHNOLOGY LTD

USA . 27,111 parts In-Stock

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Microchip USA

USA . 4,799 parts In-Stock

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Fulton Briggs Corp.

USA . 4,085 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Parana Technologies

USA . 2,158 parts In-Stock

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$0.197

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Supply Digital

USA . 1,294 parts In-Stock

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Metaverse IC Inc.

Canada . 371 parts In-Stock

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Assy Fe

Spain . 338 parts In-Stock

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Perfect Parts

USA . 276 parts In-Stock

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Kepictronics

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RTC Component Inc.

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Overview

Discover the reliable performance and quality of the 1N4104 Zener Diode by STMicroelectronics. Manufactured with precision and expertise, this diode offers unparalleled value and benefits to customers in various applications. With a nominal reference voltage of 10V and maximum power dissipation of 0.25W, this diode ensures efficient operation and stability. Whether used in voltage regulation, protection circuits, or voltage stabilization, the 1N4104 guarantees optimal performance and peace of mind for your electronic projects.

Feature Benefit Bullets

Package Body Material: GLASS

Glass package provides excellent protection and high reliability, making the zener diode suitable for various demanding applications.

Working Test Current: 0.25 mA

Low working test current ensures energy efficiency and helps in reducing power consumption during operation.

Maximum Reverse Current: 1 uA

Low maximum reverse current ensures minimal leakage and enhances the overall performance of the diode.

Maximum Voltage Tolerance: 5 %

High voltage tolerance of 5% ensures consistent and stable operation in varying voltage conditions.

Maximum Operating Temperature: 200 °C

Wide operating temperature range of -65 to 200 °C enables the diode to function effectively in extreme environments.

Nominal Reference Voltage: 10 V

10V nominal reference voltage provides precise and reliable voltage regulation, making it suitable for various circuit applications.

Technical Specifications

Zener Diodes 1N4104 attributes and parameters. Explore more Zener Diodes devices from STMicroelectronics

Specs

Additional Features:

LOW NOISE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

200 ohm

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Nominal Reference Voltage:

10 V

Maximum Reverse Current:

1 uA

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

.25 mA

Trade Compliance

1N4104 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-00-465-4630, 5961004654630, 5961-00-505-0857, 5961005050857

NIIN

004654630, 005050857

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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