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1N4106

STMicroelectronics

1N4106 by STMicroelectronics

1N4106 by STMicroelectronics is a Zener diode with 12V nominal voltage, 0.25W power dissipation, and 200 ohm dynamic impedance. It is used for voltage regulation in electronic circuits due to its unidirectional polarity and silicon diode element material.

Median Price

$2.310

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 81 parts In-Stock

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$2.310

100+ parts

$2.150

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81

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$2.150

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EBV Elektronik

Germany . 132 parts In-Stock

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Freelance Electronics

USA . 23 parts In-Stock

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$0.270

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23

$0.270

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Digiode

USA . 5,108 parts In-Stock

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$2.194

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Vyrian

USA . 8,237 parts In-Stock

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$2.310

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American Microsemiconductor Inc.

USA . 439 parts In-Stock

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$2.830

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439

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PC Components Company LLC

USA . 2,394 parts In-Stock

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Bristol Electronics

USA . 2,394 parts In-Stock

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ECAB

Sweden . 900 parts In-Stock

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Tech-Mark Corp

USA . 880 parts In-Stock

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880

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ES Components

USA . 878 parts In-Stock

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Electronic Expediters

USA . 584 parts In-Stock

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Anansix

USA . 410 parts In-Stock

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Electronics Depot

USA . 409 parts In-Stock

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NAC Semi

USA . 106 parts In-Stock

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$9.560

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$8.690

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106

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$9.560

$8.690

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Mil-Aero Solutions, Inc.

USA . 65 parts In-Stock

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Pride Electronics

USA . 58 parts In-Stock

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Resion

USA . 48 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 18 parts In-Stock

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Prism Electronics

USA . 13 parts In-Stock

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Speed Components Ltd

Israel . 10 parts In-Stock

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10

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MISTER SPROCKETS

USA . 2 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 388 parts In-Stock

1+ parts

$0.095

100+ parts

-

1k+ parts

$0.085

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388

$0.095

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$0.085

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MKK Technologies

India . 702 parts In-Stock

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$0.178

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702

$0.178

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DigiPath Technology Company

USA . 702 parts In-Stock

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$0.178

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702

$0.178

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Native Components

USA . 869 parts In-Stock

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$1.840

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869

$1.840

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Northwest PG Solutions

USA . 345 parts In-Stock

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$2.024

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345

$2.024

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Corphita

USA . 4,592 parts In-Stock

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$2.079

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Component Stockers USA

USA . 224 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 28,456 parts In-Stock

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Microchip USA

USA . 11,280 parts In-Stock

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LMD Electronica

Estonia . 7,207 parts In-Stock

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Ledger Components

France . 5,974 parts In-Stock

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NIA Electronics

USA . 4,882 parts In-Stock

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Montano Global Distributors

Canada . 4,074 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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2,780

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Supply Digital

USA . 1,971 parts In-Stock

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LOOK Integrated Logistics

Peru . 1,732 parts In-Stock

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Parana Technologies

USA . 365 parts In-Stock

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$0.113

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365

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Perfect Parts

USA . 244 parts In-Stock

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RTC Component Inc.

USA . 59 parts In-Stock

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Assy Fe

Spain . 34 parts In-Stock

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Overview

Unlock a world of possibilities with the STMicroelectronics 1N4106 Zener Diode. Manufactured by a trusted industry leader, this high-quality product offers reliable performance and precise voltage regulation for a wide range of applications. With its superior design and efficiency, the 1N4106 provides unmatched value and benefits to customers looking for a dependable solution to their circuit protection needs. Trust in STMicroelectronics to deliver excellence with the 1N4106 Zener Diode.

Feature Benefit Bullets

Package Body Material: GLASS

Glass package provides high quality insulation and protection for the diode, ensuring durability and long lifespan.

Config: SINGLE

Single configuration design simplifies circuit layout and reduces complexity of design, making it easier to incorporate into various electronic devices.

Working Test Current: 0.25 mA

Low working test current ensures efficient operation while still providing adequate performance for the intended applications.

Maximum Reverse Current: 0.05 uA

Low maximum reverse current ensures minimal leakage and improved reliability of the diode.

Package Shape: ROUND

Round package shape offers uniform distribution of stress, improving mechanical stability and resistance to external factors.

No. of Terminals: 2

Simple two-terminal configuration makes it easy to integrate the diode into circuits and ensures compatibility with standard electronic setups.

Package Style (Meter): LONG FORM

Long form package style provides more surface area for heat dissipation, allowing the diode to operate efficiently at high power levels.

Maximum Voltage Tolerance: 5 %

Tight voltage tolerance ensures consistent performance and precise regulation in electronic circuits.

Maximum Operating Temperature: 200 °C

High maximum operating temperature range makes the diode suitable for a wide range of applications, even in demanding environments.

Maximum Dynamic Impedance: 200 ohm

Low dynamic impedance ensures stable and reliable operation of the diode in various circuit conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows the diode to function effectively even in cold climate conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and ensures secure connections for reliable performance.

Terminal Position: AXIAL

Axial terminal position simplifies PCB mounting and allows for easy integration into circuits.

Case Connection: ISOLATED

Isolated case connection improves safety and prevents the risk of electrical short circuits in the system.

Maximum Power Dissipation: 0.25 W

High maximum power dissipation rating allows the diode to handle increased power levels without compromising on performance.

Diode Type: ZENER DIODE

Zener diode design provides stable voltage regulation and protection against voltage spikes, making it ideal for voltage reference applications.

Nominal Reference Voltage: 12 V

Precise nominal reference voltage of 12 V ensures accurate voltage regulation for various electronic circuits and devices.

Technology: ZENER

Zener technology ensures excellent voltage regulation characteristics and reliable performance in a wide range of operating conditions.

Terminal Form: WIRE

Wire terminal form offers flexibility in connecting the diode to circuits and ensures easy installation and maintenance.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that current flows in one direction only, providing protection against reverse voltage and improving circuit reliability.

Diode Element Material: SILICON

Silicon diode element material offers high performance, durability, and stability, making it a reliable choice for various electronic applications.

Technical Specifications

Zener Diodes 1N4106 attributes and parameters. Explore more Zener Diodes devices from STMicroelectronics

Specs

Additional Features:

LOW NOISE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

200 ohm

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Nominal Reference Voltage:

12 V

Maximum Reverse Current:

.05 uA

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

.25 mA

Trade Compliance

1N4106 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-00-164-9827, 5961001649827, 5961-00-928-0941, 5961009280941, 5961-00-501-1303, 5961005011303, 5961-33-103-8337, 5961331038337

NIIN

001649827, 009280941, 005011303, 331038337

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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