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1N4102

STMicroelectronics

1N4102 by STMicroelectronics

1N4102 by STMicroelectronics is a Zener diode with 8.7V nominal voltage, 200 ohm dynamic impedance, and 5% voltage tolerance. It is used in applications requiring precise voltage regulation such as power supplies and voltage references due to its unidirectional polarity and silicon diode element material.

Median Price

$2.370

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 91 parts In-Stock

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$1.027

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91

$1.027

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Mouser Electronics

USA . 611 parts In-Stock

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$2.280

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611

$2.280

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DigiKey

USA . 347 parts In-Stock

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$2.460

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$2.290

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347

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Microchip Technology

USA . 227 parts In-Stock

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$2.460

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227

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Verical

USA . 91 parts In-Stock

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91

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Digiode

USA . 3,879 parts In-Stock

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$0.487

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Vyrian

USA . 23,917 parts In-Stock

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$0.513

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23,917

$0.513

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NAC Semi

USA . 374 parts In-Stock

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$1.250

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$0.970

1k+ parts

$0.910

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374

$1.250

$0.970

$0.910

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Freelance Electronics

USA . 485 parts In-Stock

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$1.254

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$1.317

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$1.242

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485

$1.254

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$1.242

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American Microsemiconductor Inc.

USA . 388 parts In-Stock

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$2.860

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388

$2.860

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Anansix

USA . 947 parts In-Stock

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Electronic Expediters

USA . 472 parts In-Stock

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ES Components

USA . 341 parts In-Stock

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Lakeview Electronics

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North Shore Components

USA . 2 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 790 parts In-Stock

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$0.161

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$0.145

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790

$0.161

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$0.145

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MKK Technologies

India . 347 parts In-Stock

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$0.303

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347

$0.303

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DigiPath Technology Company

USA . 347 parts In-Stock

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$0.303

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347

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Corphita

USA . 1,298 parts In-Stock

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$0.462

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QUARKTWIN TECHNOLOGY LTD

USA . 25,267 parts In-Stock

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Microchip USA

USA . 6,536 parts In-Stock

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Supply Digital

USA . 2,617 parts In-Stock

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Fulton Briggs Corp.

USA . 1,767 parts In-Stock

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Parana Technologies

USA . 1,272 parts In-Stock

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$0.192

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Native Components

USA . 899 parts In-Stock

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Northwest PG Solutions

USA . 693 parts In-Stock

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693

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Overview

Discover the reliable and high-quality 1N4102 Zener Diode by STMicroelectronics, offering a wide range of applications with superior performance. With a focus on precision and durability, STMicroelectronics ensures that their products meet the highest standards in the industry. From voltage regulation to surge protection, this Zener Diode provides exceptional value for customers seeking stability and efficiency in their electronic circuits. Trust STMicroelectronics to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: GLASS

Glass material provides excellent thermal and mechanical properties, making the diode reliable and durable.

Working Test Current: 0.25 mA

The low working test current ensures minimal power consumption and efficient performance.

Maximum Reverse Current: 1 uA

Low maximum reverse current indicates better reverse leakage performance of the diode.

Maximum Voltage Tolerance: 5 %

Tight voltage tolerance ensures precision in voltage regulation, making the diode suitable for critical applications.

Maximum Operating Temperature: 200 °C

High maximum operating temperature allows for reliable operation even in harsh environmental conditions.

Nominal Reference Voltage: 8.7 V

The specified reference voltage provides a stable output reference for voltage regulation purposes.

Technical Specifications

Zener Diodes 1N4102 attributes and parameters. Explore more Zener Diodes devices from STMicroelectronics

Specs

Additional Features:

LOW NOISE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

200 ohm

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Nominal Reference Voltage:

8.7 V

Maximum Reverse Current:

1 uA

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

.25 mA

Trade Compliance

1N4102 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

4720-01-151-8127, 4720011518127, 5961-00-453-8555, 5961004538555

NIIN

011518127, 004538555

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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