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TT8J2TR

ROHM

TT8J2TR by ROHM

ROHM's TT8J2TR is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 10A IDM, 0.084 ohm RDS(on), and METAL-OXIDE SEMICONDUCTOR technology. Its PLASTIC/EPOXY package with 8 terminals in SMALL OUTLINE style makes it suitable for surface mount designs.

Median Price

$0.297

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8

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1k+

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Arrow

USA . 2,940 parts In-Stock

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$0.026

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$0.016

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DigiKey

USA . 5,999 parts In-Stock

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$1.080

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$0.502

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$0.369

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$0.315

5,999

$1.080

$0.502

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$0.315

Mouser Electronics

USA . 2,479 parts In-Stock

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$0.342

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Verical

USA . 615 parts In-Stock

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$0.252

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Chip1Stop

Japan . 80 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 615 parts In-Stock

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Chip Stock

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Nova Conductors

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Ampacity Inc.

Singapore . 2,239 parts In-Stock

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$0.048

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CoreStaff

Japan . 308 parts In-Stock

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$0.175

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$0.164

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$0.163

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308

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Advanced Electronics

New Zealand . 550 parts In-Stock

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$2.321

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$2.112

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$1.903

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Metaverse IC Inc.

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Aranea Global

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Overview

Unleash the power of innovation with the TT8J2TR by ROHM, a high-quality P-CHANNEL Power FET designed for switching applications. With its compact package and built-in diode, this transistor offers seamless performance and reliability. Experience enhanced efficiency and superior functionality with the TT8J2TR, providing customers with value and benefits that elevate their projects to the next level. Trust in ROHM's expertise and craftsmanship to deliver excellence in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and durable, helping to ensure long-term reliability.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low on-resistance, making them suitable for high efficiency applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for flexibility in circuit design and the built-in diode offers protection against reverse voltage.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient power control and management.

Surface Mount: YES

Surface mount capability makes for easy installation and space-saving on PCBs.

Minimum DS Breakdown Voltage: 30 V

The minimum breakdown voltage of 30V allows for handling moderate levels of power in various applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high voltage capability and low input current requirements.

Maximum Drain-Source On Resistance: 0.084 ohm

Low on-resistance of 0.084 ohm ensures minimal power loss and efficient performance.

Technical Specifications

Power Field Effect Transistors (FET) TT8J2TR attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

2.5 A

Maximum Drain-Source On Resistance:

.084 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F8

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

10 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN COPPER

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TT8J2TR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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