Loading...

SP8K41HZGTB

ROHM

SP8K41HZGTB by ROHM

ROHM SP8K41HZGTB is a N-CHANNEL FET with 80V DS breakdown voltage, ideal for SWITCHING applications. Features include 13.6A max pulsed drain current, 0.16 ohm max drain-source resistance, and 40pF feedback capacitance. Suitable for small outline packages in automotive environments (AEC-Q101).

Median Price

$2.385

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 4 parts In-Stock

1+ parts

$2.210

100+ parts

-

1k+ parts

-

10k+ parts

-

4

$2.210

-

-

-

Element14

Singapore . 2,209 parts In-Stock

1+ parts

$2.560

100+ parts

$1.670

1k+ parts

$1.200

10k+ parts

-

2,209

$2.560

$1.670

$1.200

-

Mouser Electronics

USA . 2,378 parts In-Stock

1+ parts

$2.640

100+ parts

$1.210

1k+ parts

$0.904

10k+ parts

$0.830

2,378

$2.640

$1.210

$0.904

$0.830

Newark

USA . 4 parts In-Stock

1+ parts

$2.740

100+ parts

$1.240

1k+ parts

$0.904

10k+ parts

-

4

$2.740

$1.240

$0.904

-

DigiKey

USA . 2,053 parts In-Stock

1+ parts

$2.770

100+ parts

$1.242

1k+ parts

$1.016

10k+ parts

$0.830

2,053

$2.770

$1.242

$1.016

$0.830

RS (Exports)

UK . 3,965 parts In-Stock

1+ parts

-

100+ parts

$0.898

1k+ parts

$0.794

10k+ parts

-

3,965

-

$0.898

$0.794

-

Verical

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

$1.200

1k+ parts

$1.000

10k+ parts

$0.922

2,500

-

$1.200

$1.000

$0.922

Chip1Stop

Japan . 2,500 parts In-Stock

1+ parts

-

100+ parts

$1.190

1k+ parts

$0.867

10k+ parts

$0.721

2,500

-

$1.190

$0.867

$0.721

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ACDS - Activité Composants Distribution Service

France . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

CoreStaff

Japan . 2,475 parts In-Stock

1+ parts

$1.244

100+ parts

$0.519

1k+ parts

$0.472

10k+ parts

-

2,475

$1.244

$0.519

$0.472

-

Component Stockers USA

USA . 8,967 parts In-Stock

1+ parts

$1.900

100+ parts

$0.830

1k+ parts

$0.740

10k+ parts

-

8,967

$1.900

$0.830

$0.740

-

Microchip USA

USA . 3,906 parts In-Stock

1+ parts

$6.118

100+ parts

-

1k+ parts

-

10k+ parts

-

3,906

$6.118

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 18,761 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18,761

-

-

-

-

Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Overview

Discover the power and efficiency of the SP8K41HZGTB by ROHM. As a leading manufacturer in the field of Power Field Effect Transistors, ROHM delivers high-quality products like the SP8K41HZGTB that are perfect for switching applications. With its N-CHANNEL polarity and 2 separate elements with built-in diode configuration, this transistor offers enhanced performance and reliability. Ideal for a wide range of uses, this transistor is designed to provide maximum power dissipation and operating temperature, making it a valuable asset for any project. Experience the difference with ROHM's SP8K41HZGTB and take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the FET, making it reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower on-resistance and higher switching speeds compared to P-channel FETs, making them efficient for switching applications.

Minimum DS Breakdown Voltage: 80 V

With a high breakdown voltage, this FET can handle higher voltages without damage, making it suitable for various applications requiring voltage regulation.

Maximum Drain Current (Abs): 3.4 A

This FET can handle high current levels, allowing it to power a wide range of devices or components.

Maximum Power Dissipation (Abs): 2 W

The FET's ability to dissipate up to 2 watts of power without overheating ensures reliable performance under heavy load conditions.

Maximum Operating Temperature: 150 °C

The high operating temperature range makes this FET suitable for use in harsh environmental conditions or in applications where heat dissipation is a concern.

Technical Specifications

Power Field Effect Transistors (FET) SP8K41HZGTB attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

80 V

Maximum Drain Current (Abs) (ID):

3.4 A

Maximum Drain Current (ID):

3.4 A

Maximum Drain-Source On Resistance:

.16 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

40 pF

JESD-30 Code:

R-PDSO-G8

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Maximum Pulsed Drain Current (IDM):

13.6 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SP8K41HZGTB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.