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R6004RND3TL1

ROHM

R6004RND3TL1 by ROHM

ROHM R6004RND3TL1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 12A IDM and 52mJ EAS, operating in enhancement mode. With a package style of small outline and gull wing terminals, it offers high power dissipation up to 60W.

Median Price

$0.689

Lifecycle Status

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8

In-Stock Inventory

1k+

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Newark

USA . 61 parts In-Stock

1+ parts

$0.685

100+ parts

-

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61

$0.685

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Farnell

UK . 71 parts In-Stock

1+ parts

$0.689

100+ parts

$0.500

1k+ parts

$0.414

10k+ parts

$0.386

71

$0.689

$0.500

$0.414

$0.386

DigiKey

USA . 2,675 parts In-Stock

1+ parts

$1.010

100+ parts

$0.580

1k+ parts

$0.502

10k+ parts

$0.465

2,675

$1.010

$0.580

$0.502

$0.465

Element14

Singapore . 130 parts In-Stock

1+ parts

$1.216

100+ parts

$0.796

1k+ parts

$0.551

10k+ parts

$0.541

130

$1.216

$0.796

$0.551

$0.541

Mouser Electronics

USA . 2,500 parts In-Stock

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$0.442

2,500

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$0.442

Chip1Stop

Japan . 260 parts In-Stock

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100+ parts

$0.680

1k+ parts

$0.531

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260

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$0.680

$0.531

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Verical

USA . 210 parts In-Stock

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-

100+ parts

$0.700

1k+ parts

$0.632

10k+ parts

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210

-

$0.700

$0.632

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Distributors (In-Stock)

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ACDS - Activité Composants Distribution Service

France . 100 parts In-Stock

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100

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CoreStaff

Japan . 100 parts In-Stock

1+ parts

$0.930

100+ parts

$0.403

1k+ parts

$0.356

10k+ parts

-

100

$0.930

$0.403

$0.356

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Microchip USA

USA . 8,462 parts In-Stock

1+ parts

$3.325

100+ parts

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8,462

$3.325

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Overview

Discover the cutting-edge R6004RND3TL1 by ROHM, a high-quality Power FET that revolutionizes switching applications. With its N-channel configuration and built-in diode, this transistor offers unparalleled reliability and efficiency. Perfect for a wide range of electronics, this transistor can handle up to 600V and 12A of pulsed drain current. Experience the value of enhanced performance and durability with ROHM's innovative technology. Upgrade your projects today with the R6004RND3TL1 and unleash its full potential.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Minimum DS Breakdown Voltage: 600 V

High breakdown voltage allows the transistor to handle high voltage applications safely and reliably.

Maximum Pulsed Drain Current (IDM): 12 A

Capable of handling high current pulses, making it suitable for applications where short bursts of current are required.

Avalanche Energy Rating (EAS): 52 mJ

Higher avalanche energy rating indicates better ruggedness and ability to withstand voltage spikes, ensuring reliability in harsh conditions.

Maximum Power Dissipation (Abs): 60 W

High power dissipation capability allows the transistor to handle high power applications without overheating.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without any performance degradation, making it suitable for a wide range of environments.

Technical Specifications

Power Field Effect Transistors (FET) R6004RND3TL1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Avalanche Energy Rating (EAS):

52 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (ID):

4 A

Maximum Drain-Source On Resistance:

1.73 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

12 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

R6004RND3TL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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