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2SAR552P5T100

ROHM

2SAR552P5T100 by ROHM

ROHM 2SAR552P5T100 is a PNP BJT transistor for switching applications. It has VCEsat of 0.4V, hFE of 200, and IC of 3A. With a max operating temperature of 150°C, it is suitable for small outline packages in surface mount configurations.

Median Price

$0.300

Lifecycle Status

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DigiKey

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$0.870

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$0.348

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$0.239

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$0.178

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$0.870

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Verical

USA . 800 parts In-Stock

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Element14

Singapore . 305 parts In-Stock

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$0.336

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$0.184

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Farnell

UK . 300 parts In-Stock

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$0.263

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$0.181

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$0.141

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Chip1Stop

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Cyclops Electronics Ltd

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NAC Semi

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$0.124

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ACDS - Activité Composants Distribution Service

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Component Stockers USA

USA . 7,339 parts In-Stock

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$0.160

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$0.100

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$0.100

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CoreStaff

Japan . 900 parts In-Stock

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$0.299

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$0.170

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$0.116

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QUARKTWIN TECHNOLOGY LTD

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Epart123

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$0.180

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GreenTree Electronics

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Perfect Parts

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Overview

Unleash the power of innovation with ROHM's 2SAR552P5T100 transistor! Made with the highest quality materials and cutting-edge technology, this small signal bipolar junction transistor is perfect for a wide range of switching applications. With a maximum VCEsat of just 0.4V and a minimum DC current gain of 200, this PNP transistor offers superior performance and efficiency. Trust ROHM to deliver reliable, high-performance components that meet your needs and surpass your expectations. Experience the difference with the 2SAR552P5T100 and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, making it suitable for a wide range of applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration with other PNP components in a circuit.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can handle rapid switching transitions effectively.

Surface Mount: YES

Being surface mount compatible saves space on PCBs and allows for automated manufacturing processes.

Maximum VCEsat: 0.4 V

Low VCEsat minimizes power loss and improves efficiency in switching applications.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement on PCBs and efficient use of space.

Terminal Form: FLAT

Flat terminals ensure secure connections and simplify soldering processes.

No. of Terminals: 3

Having 3 terminals allows for easy connections in a circuit.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2W, this transistor can handle high-power applications effectively.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on PCBs and allows for high component density.

Minimum DC Current Gain (hFE): 200

A high minimum DC current gain ensures stable and reliable amplification in the circuit.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can operate reliably in a wide range of environments.

Maximum Collector-Base Capacitance: 25 pF

Low collector-base capacitance reduces signal distortion and improves performance in high-frequency applications.

Maximum Collector-Emitter Voltage: 30 V

With a maximum collector-emitter voltage of 30V, this transistor can handle a range of voltage requirements in a circuit.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in the transistor.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3A, this transistor can handle high current loads effectively.

Terminal Finish: TIN

Tin terminal finish ensures good solderability and low contact resistance.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and reduces complexity.

Case Connection: COLLECTOR

The collector case connection allows for easy heat dissipation, ensuring reliable operation at high temperatures.

Maximum Time At Peak Reflow Temperature (s): 10

The short maximum time at peak reflow temperature ensures quick and efficient soldering processes.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260°C ensures proper soldering and component reliability.

Nominal Transition Frequency (fT): 330 MHz

With a high nominal transition frequency, this transistor is suitable for high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SAR552P5T100 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Base Capacitance:

25 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2SAR552P5T100 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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