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SFM9110TF

Rochester Electronics

SFM9110TF by Rochester Electronics

SFM9110TF by Rochester Electronics is a P-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a max IDM of 8A and EAS of 53mJ, making it suitable for enhancement mode operation in various electronic devices. The transistor's small outline package with gull wing terminals and drain connection offers efficient performance in compact designs.

Median Price

$0.608

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,451 parts In-Stock

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$0.530

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$0.530

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Rochester

USA . 951 parts In-Stock

1+ parts

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$0.608

1k+ parts

$0.504

10k+ parts

$0.450

951

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$0.608

$0.504

$0.450

Verical

USA . 720 parts In-Stock

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$0.630

10k+ parts

$0.562

720

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$0.630

$0.562

Distributors (In-Stock)

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Digiode

USA . 429 parts In-Stock

1+ parts

$0.473

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429

$0.473

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Vyrian

USA . 530 parts In-Stock

1+ parts

$0.498

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530

$0.498

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ComSIT Distribution GmbH

Germany . 2,896 parts In-Stock

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2,896

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Distributors (Availability)

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Corphita

USA . 325 parts In-Stock

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$0.448

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325

$0.448

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Continental Prestige Electronics

USA . 2,562 parts In-Stock

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$0.600

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2,562

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$0.600

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Supply Digital

USA . 509 parts In-Stock

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509

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Overview

Rochester Electronics brings you the SFM9110TF, a high-quality Power FET that excels in switching applications. With a built-in diode and P-channel configuration, this transistor offers superior performance and reliability. Perfect for enhancing power efficiency, this transistor can handle up to 8A of pulsed drain current with ease. Trust Rochester Electronics to deliver top-notch products that meet your power management needs. Experience the value and benefits of the SFM9110TF in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the FET, making it reliable for long-term use.

Polarity or Channel Type: P-CHANNEL

Allows for efficient current control and power management in circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by eliminating the need for an external diode.

Transistor Application: SWITCHING

Suitable for use in switching applications, providing fast and efficient performance.

Surface Mount: YES

Easy to install and reduces the need for additional hardware.

Minimum DS Breakdown Voltage: 100 V

Allows for operation in higher voltage circuits, increasing versatility.

Package Shape: RECTANGULAR

Facilitates easy placement and mounting on circuit boards.

Terminal Form: GULL WING

Aids in secure soldering and connection to other components.

Operating Mode: ENHANCEMENT MODE

Offers control over the conductivity of the FET, enhancing overall performance.

Maximum Pulsed Drain Current (IDM): 8 A

Capable of handling high current pulses, suitable for demanding applications.

Avalanche Energy Rating (EAS): 53 mJ

Provides protection against high-energy spikes, ensuring reliable operation.

No. of Terminals: 4

Offers multiple connection points for versatile circuit integration.

Package Style (Meter): SMALL OUTLINE

Compact design saves space on circuit boards and in electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Known for high efficiency and reliability in power management applications.

Transistor Element Material: SILICON

Provides stability and consistent performance over a wide range of operating conditions.

Terminal Finish: MATTE TIN

Ensures good electrical conductivity and corrosion resistance for long-term use.

Maximum Drain Current (ID): 1 A

Capable of handling moderate current levels in various circuit configurations.

Maximum Drain-Source On Resistance: 1.2 ohm

Low on-resistance helps in minimizing power loss and improving efficiency.

Terminal Position: DUAL

Allows for flexibility in circuit layout and connection options.

Case Connection: DRAIN

Provides a common connection point for the drain terminal, aiding in circuit design.

Technical Specifications

Power Field Effect Transistors (FET) SFM9110TF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Rochester Electronics

Specs

Avalanche Energy Rating (EAS):

53 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

1 A

Maximum Drain-Source On Resistance:

1.2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

8 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SFM9110TF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Rochester Electronics

For over 40 years Rochester's growing supplier authorizations enable us to provide the world's largest source of semiconductors. In partnership with over 70 leading component manufacturers, we provide our valued customers with a continuous source of critical semiconductors. Today the Rochester Semiconductor Lifecycle Solution™ offers the world’s largest range of semiconductors with over 15 billion finished devices in stock, combined with extensive manufacturing capabilities from the world's largest die bank at over 12 Billion. Rochester’s growing product and service portfolio continues to provide an authorized source of supply to customers around the world directly, in partnership with our authorized distribution network and through leading-edge e-commerce platforms.

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