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SHF-0589

Rf Micro Devices

SHF-0589 by Rf Micro Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: GALLIUM ARSENIDE; Minimum Power Gain (Gp): 10.3 dB; Package Style (Meter): SMALL OUTLINE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Sensible Micro Corp

USA . 923 parts In-Stock

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923

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Sogenti Electronics

Canada . 8 parts In-Stock

1+ parts

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8

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LittleDiode

UK . 1 parts In-Stock

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Technical Specifications

RF Small Signal Field Effect Transistors (FET) SHF-0589 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Rf Micro Devices

Specs

Configuration:

Minimum DS Breakdown Voltage:

9 V

Maximum Drain Current (ID):

.64 A

Field Effect Transistor Technology:

HETERO-JUNCTION

Highest Frequency Band:

S BAND

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Minimum Power Gain (Gp):

10.3 dB

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

SHF-0589 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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