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2SK522ERF

Renesas Technology

2SK522ERF by Renesas Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum Power Gain (Gp): 20 dB; No. of Terminals: 3; Terminal Position: SINGLE;

Median Price

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Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Northwest PG Solutions

USA . 1,194 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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1,194

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Native Components

USA . 446 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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446

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Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2SK522ERF attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Renesas Technology

Specs

Configuration:

Maximum Drain Current (ID):

.02 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Minimum Power Gain (Gp):

20 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SK522ERF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Technology

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