Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 36 A;
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Power Field Effect Transistors (FET) NP36N055IHE-AY attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Renesas Electronics
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NP36N055IHE-AY Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
SMBJ18CA
World Products
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358MX
ROHM
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;
FDC5614P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;
LM358DR2G
Onsemi
LM358DR2G by Onsemi is a dual operational amplifier with 7000uV max input offset voltage and 70dB nominal CMRR. Ideal for applications requiring low bias current such as sensor interfaces, signal conditioning circuits, and audio amplifiers. Package style: Small Outline, Technology: Bipolar, Unity Gain Bandwidth: 1000 kHz.
PIC18F4550T-I/PT
Microchip Technology
The Microchip Technology PIC18F4550T-I/PT microcontroller operates at a max clock frequency of 48 MHz with 8-bit architecture. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it suitable for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this device offers efficient performance in compact designs.
BAV99
Infineon Technologies
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Sun Wai Electronic
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Recovery Time: .004 us; Maximum Repetitive Peak Reverse Voltage: 100 V;
Goodwork Semiconductor
LAN8720A-CP-TR
LAN8720A-CP-TR by Microchip: Ethernet transceiver with 100 Mbps data rate, operates at 3.3V, and consumes 54mA max supply current. Ideal for network interfaces in commercial applications due to its small size (4x4mm) and low power consumption.
1N4148WT
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
OPA2277UA/2K5
Texas Instruments
OPA2277UA/2K5 by Texas Instruments is a dual operational amplifier with low offset voltage of 100 uV and micropower consumption of 0.004 uA. Ideal for industrial applications, it offers high common mode rejection ratio of 140 dB and unity gain bandwidth of 1 MHz. With a compact rectangular package style, it is suitable for surface mount designs in various electronic systems.
LM107H
Linear Technology
LM107H by Linear Technology is an Operational Amplifier with a max input offset voltage of 3000uV, common mode reject ratio of 96dB, and min voltage gain of 50000. It is used in military applications due to its MILITARY temperature grade and BIPOLAR technology for precise signal processing in harsh environments.
Rochester Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM317T/NOPB
LM317T/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount with three terminals for easy installation.
Itt Semiconductor
LM7805CT
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
Rectron
2N2222A
Swampscott Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
CC0603KRX7R9BB104
Yageo
Yageo's CC0603KRX7R9BB104 is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. With X7R temperature characteristics, it operates b/w -55 to 125°C. Ideal for surface mount applications in electronics due to its compact size of 1.6mm x 0.8mm x 0.8mm and wraparound terminals.
BSZ086P03NS3EGATMA1
Infineon BSZ086P03NS3EGATMA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 160A IDM, and 0.0134 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features METAL-OXIDE SEMICONDUCTOR tech and operates up to 150°C.
IRLML0100TRPBF-1
Infineon's IRLML0100TRPBF-1 is a N-channel Power FET with 100V DS breakdown voltage and 7A IDM. Ideal for enhancement mode operation, it features a built-in diode, 0.22 ohm RDS(on), and is suitable for surface mount applications in power electronics.
FDS4559_F085
FDS4559_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It features 2 elements with built-in diode, suitable for SWITCHING applications. With 20A IDM and 0.055 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150°C, making it ideal for high-power electronics.
IRLML0030TRPBF-1
Infineon's IRLML0030TRPBF-1 is a N-channel Power FET with 30V DS breakdown voltage and 21A IDM. Ideal for applications requiring high power dissipation up to 1.3W, such as in small outline packages where space is limited. Operating in enhancement mode, it offers low 0.027 ohm drain-source resistance for efficient performance.
SQ2337ES-T1_GE3
Vishay Intertechnology
The Vishay Intertechnology SQ2337ES-T1_GE3 is a P-CHANNEL Power FET with 80V DS Breakdown Voltage and 9A IDM. Ideal for applications requiring high power dissipation, it features a built-in diode, operates in enhancement mode, and has a small outline package style.
FQB34N20LTM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Case Connection: DRAIN; Package Style (Meter): SMALL OUTLINE;
IRF7341TRPBF
International Rectifier
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (Abs) (ID): 4.7 A;
IRLML6401GTRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Minimum DS Breakdown Voltage: 12 V;
IRF9530NPBF
IRF9530NPBF by Infineon is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 56A and EAS of 250mJ, operating in ENHANCEMENT MODE. With a package style of FLANGE MOUNT and -55 to 175 °C temperature range, it offers high power dissipation at 79W.
FDS6982AS_NL
Fairchild Semiconductor's FDS6982AS_NL is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 8.6A Max Drain Current. Ideal for SWITCHING applications, it features a PLASTIC/EPOXY package, GULL WING terminals, and operates in ENHANCEMENT MODE up to 150°C.
STP80NF10
STMicroelectronics
STP80NF10 by STMicroelectronics is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 320A IDM, 350mJ EAS, and 0.015 ohm RDS(ON). With a max power dissipation of 300W and operating temperature up to 175°C, it's suitable for high-power circuits.
IRF3205STRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Minimum DS Breakdown Voltage: 55 V; Additional Features: AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE;
IRF640
Comset Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
IRF540STRLPBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-263AB; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 110 A;
IPB010N06NATMA1
Infineon's IPB010N06NATMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. Features include 720A pulsed drain current, 1600mJ avalanche energy rating, and 0.001 ohm max on-resistance. With a max power dissipation of 300W and operating temp up to 175°C, it's suitable for high-power circuits in various industries.
G3R40MT12K
Genesic Semiconductor
Power Field-Effect Transistors;
ZXMP6A17GTA
Diodes Incorporated
ZXMP6A17GTA by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 13.7A IDM, 4.1A ID, and 0.125 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 3.9W and can withstand temperatures up to 150°C.
BSC070N10NS3GATMA1
Infineon's BSC070N10NS3GATMA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.007 ohm RDS(on), and 360A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. The PLASTIC/EPOXY package with DUAL terminals and built-in diode ensures reliable performance in various systems.
IRFP460PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Package Style (Meter): FLANGE MOUNT; Case Connection: DRAIN;
IRF9530PBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Transistor Application: SWITCHING; Terminal Position: SINGLE;
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NP36P06KDG-E1-AY
Nec Electronics
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: .0375 ohm; No. of Terminals: 2;
Renesas Electronics
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 56 W; Case Connection: DRAIN; Terminal Form: GULL WING;
Nec Electronics America
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0375 ohm; Operating Mode: ENHANCEMENT MODE; JEDEC-95 Code: TO-263AB;
NP36P04SDG-E1-AY
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 56 W; Package Body Material: PLASTIC/EPOXY; Reference Standard: AEC-Q101;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Transistor Element Material: SILICON; Qualification: Not Qualified;
NP36N055ILE-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Maximum Time At Peak Reflow Temperature (s): 10; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NP36N055IHE-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; No. of Elements: 1; Peak Reflow Temperature (C): 260;
NP36N055ILE-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Maximum Drain Current (ID): 36 A; Operating Mode: ENHANCEMENT MODE;
NP36N055ILE-E1-AZ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Qualification: Not Qualified; JESD-30 Code: R-PSSO-G2;
NP36N055HHE-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Maximum Drain Current (ID): 36 A; Maximum Drain Current (Abs) (ID): 36 A;
NP36N055HLE-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NP36N055IHE-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Maximum Drain Current (ID): 36 A; Maximum Drain Current (Abs) (ID): 36 A;
NP36N055ILE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Terminal Finish: TIN LEAD; JESD-30 Code: R-PSSO-G2;
NP36N055ILE-E1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Maximum Drain Current (Abs) (ID): 36 A; No. of Elements: 1;
NP36N055HLE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Package Style (Meter): IN-LINE; Avalanche Energy Rating (EAS): 108 mJ;
NP36N055IHE-E1-AZ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; No. of Terminals: 2; Package Body Material: PLASTIC/EPOXY;
NP36N055HLE-AZ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Maximum Time At Peak Reflow Temperature (s): 10; Peak Reflow Temperature (C): 260;
NP36N055IHE-E2
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; No. of Elements: 1; Maximum Operating Temperature: 175 Cel;
NP36N055IHE-E2-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 36 A;
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