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NP160N055TUJ-E1-AY

Renesas Electronics

NP160N055TUJ-E1-AY by Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 55 V; JESD-30 Code: R-PSSO-G6; Package Style (Meter): SMALL OUTLINE;

Median Price

$2.830

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,600 parts In-Stock

1+ parts

-

100+ parts

$2.440

1k+ parts

$2.180

10k+ parts

$2.060

1,600

-

$2.440

$2.180

$2.060

DigiKey

USA . 1,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.830

10k+ parts

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1,600

-

-

$2.830

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Verical

USA . 1,600 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$3.212

10k+ parts

-

1,600

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-

$3.212

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey Marketplace

USA . 1,600 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,600

-

-

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Distributors (Availability)

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Component Stockers USA

USA . 3,115 parts In-Stock

1+ parts

$2.780

100+ parts

$2.610

1k+ parts

$2.360

10k+ parts

-

3,115

$2.780

$2.610

$2.360

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Microchip USA

USA . 419 parts In-Stock

1+ parts

$16.965

100+ parts

-

1k+ parts

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419

$16.965

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Perfect Parts

USA . 896 parts In-Stock

1+ parts

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896

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Technical Specifications

Power Field Effect Transistors (FET) NP160N055TUJ-E1-AY attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

55 V

Maximum Drain Current (ID):

160 A

Maximum Drain-Source On Resistance:

.003 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G6

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

640 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NP160N055TUJ-E1-AY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Renesas Electronics

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