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NE662M03-T1

Renesas Electronics

NE662M03-T1 by Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .115 W; Maximum Collector Current (IC): .035 A; Minimum DC Current Gain (hFE): 60;

Median Price

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Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

GreenTree Electronics

Israel . 6,000 parts In-Stock

1+ parts

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6,000

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Authorized Procurement Solutions

USA . 2,800 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,800

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Kepictronics

USA . 2,650 parts In-Stock

1+ parts

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2,650

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NE662M03-T1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-609 Code:

e0

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

NE662M03-T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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