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GA1L3Z-L36

Renesas Electronics

GA1L3Z-L36 by Renesas Electronics

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 135; Transistor Element Material: SILICON;

Median Price

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Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 792 parts In-Stock

1+ parts

$1.300

100+ parts

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1k+ parts

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10k+ parts

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792

$1.300

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Northwest PG Solutions

USA . 735 parts In-Stock

1+ parts

$1.430

100+ parts

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1k+ parts

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10k+ parts

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735

$1.430

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) GA1L3Z-L36 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

135

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

GA1L3Z-L36 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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