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GA1L3M

Renesas Electronics

GA1L3M by Renesas Electronics

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V; Maximum Turn On Time (ton): 500 ns;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Assy Fe

Spain . 12,000 parts In-Stock

1+ parts

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1k+ parts

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12,000

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Northwest PG Solutions

USA . 490 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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490

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Native Components

USA . 382 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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382

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) GA1L3M attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

5000 ns

Maximum Turn On Time (ton):

500 ns

Trade Compliance

GA1L3M Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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